1.
Product profile
1.1 General description
Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package.
1.2 Features
s
Small and flat lead SMD plastic package
s
Low leakage current
1.3 Applications
s
General-purpose switching
1.4 Quick reference data
BAS116H
75 V, low leakage diode in small SOD123F package
Rev. 01 -- 11 April 2005
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
F
forward current
-
-
215
mA
V
R
reverse voltage
-
-
75
V
I
R
reverse current
V
R
= 75 V
-
0.003
5.0
nA
9397 750 14881
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 April 2005
2 of 9
Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
cathode
[1]
2
anode
2
1
sym001
1
2
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BAS116H
-
plastic surface mounted package; 2 leads
SOD123F
Table 4:
Marking codes
Type number
Marking code
BAS116H
B1
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V
RRM
repetitive peak reverse
voltage
-
85
V
V
R
reverse voltage
-
75
V
I
F
forward current
-
215
mA
I
FRM
repetitive peak forward
current
-
500
mA
I
FSM
non-repetitive peak forward
current
t
p
= 1
s
-
4
A
t
p
= 1 ms
-
1
A
t
p
= 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
25
C
[1]
-
375
mW
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
9397 750 14881
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 April 2005
3 of 9
Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
[2]
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
; measured at I
R
= 1 mA
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1] [2]
-
-
330
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
-
-
70
K/W
Table 7:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V
F
forward voltage
I
F
= 1 mA
[1]
-
-
0.90
mV
I
F
= 10 mA
[1]
-
-
1.00
mV
I
F
= 50 mA
[1]
-
-
1.10
mV
I
F
= 150 mA
[1]
-
-
1.25
mV
I
R
reverse current
V
R
= 75 V
-
0.003 5.0
nA
V
R
= 75 V; T
j
= 150
C
-
3
80.0
nA
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
-
2
-
pF
t
rr
reverse recovery
time
[2]
-
0.8
3.0
s
9397 750 14881
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 April 2005
4 of 9
Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
(1) T
amb
= 150
C; typical values
(2) T
amb
= 25
C; typical values
(3) T
amb
= 25
C; maximum values
Based on square wave currents
(1) T
j
= 25
C; prior to surge
Fig 1.
Forward current as a function of forward
voltage
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration
V
R
= 75 V
(1) Maximum values
(2) Typical values
T
amb
= 25
C; f = 1 MHz
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
mlb752
300
0
100
200
I
F
(mA)
0
1.6
0.8
1.2
0.4
V
F
(V)
(1)
(2)
(3)
mbg704
10
1
10
2
I
FSM
(A)
10
-
1
t
p
(
s)
1
10
4
10
3
10
10
2
10
2
150
200
50
0
mlb754
100
10
1
10
-
1
10
-
2
10
-
3
I
R
(nA)
T
j
(
C)
(1)
(2)
mbg526
0
10
20
15
5
V
R
(V)
2
0
1
C
d
(pF)
9397 750 14881
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 11 April 2005
5 of 9
Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
8.
Test information
(1) I
R
= 1 mA
Fig 5.
Reverse recovery time test circuit and waveforms
trr
(1)
+
I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
R
S
R
S
= 50
I
F
D.U.T.
R
i
= 50
SAMPLING
OSCILLOSCOPE
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