DATA SHEET
Product specification
Supersedes data of 1996 Sep 10
1999 May 26
DISCRETE SEMICONDUCTORS
BAS19; BAS20; BAS21
General purpose diodes
book, halfpage
M3D088
1999 May 26
2
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 100 V; 150 V; 200 V
Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM185
2
n.c.
1
3
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING
CODE
(1)
BAS19
JP
BAS20
JR
BAS21
JS
1999 May 26
3
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAS19
-
120
V
BAS20
-
200
V
BAS21
-
250
V
V
R
continuous reverse voltage
BAS19
-
100
V
BAS20
-
150
V
BAS21
-
200
V
I
F
continuous forward current
see Fig.2; note 1
-
200
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 10 ms
-
1.7
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 May 26
4
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
1
V
I
F
= 200 mA
1.25
V
I
R
reverse current
see Fig.5
BAS19
V
R
= 100 V
100
nA
V
R
= 100 V; T
j
= 150
C
100
A
BAS20
V
R
= 150 V
100
nA
V
R
= 150 V; T
j
= 150
C
100
A
BAS21
V
R
= 200 V
100
nA
V
R
= 200 V; T
j
= 150
C
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
5
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
; measured at
I
R
= 3 mA; see Fig.8
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
330
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 26
5
Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG442
Tamb (
o
C)
IF
(mA)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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