2003 Jul 02
2
Philips Semiconductors
Product specification
High-voltage switching diode array
BAS21VD
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 1 A.
APPLICATIONS
High-voltage switching in surface mounted circuits
Automotive
Communication.
DESCRIPTION
The BAS21VD is a high-voltage diode array fabricated in
planar technology and encapsulated in a small SOT457
plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
cathode (k3)
4
anode (a3)
5
anode (a2)
6
anode (a1)
handbook, halfpage
MAM473
4
5
6
3
2
1
1
3
2
4
5
6
Fig.1 Simplified outline (SOT457) and symbol.
Marking code: B5.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
250
V
V
R
continuous reverse voltage
-
200
V
I
F
continuous forward current
note 1; see Fig.2
-
200
mA
I
FRM
repetitive peak forward current
t = 1 ms;
= 25%
-
1
A
I
FSM
non-repetitive peak forward current square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 10
s
-
16
A
t = 100
s
-
8
A
t = 10 ms
-
2
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
2003 Jul 02
3
Philips Semiconductors
Product specification
High-voltage switching diode array
BAS21VD
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT457 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
TYP.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 100 mA
-
1
V
I
F
= 200 mA
-
1.25
V
I
R
reverse current
V
R
= 200 V; note 1; see Fig.5
25
100
nA
V
R
= 200 V; T
j
= 150
C; note 1
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
0.6
5
pF
t
rr
reverse recovery time
when switched from
I
F
= 30 mA to I
R
= 30 mA;
R
L
= 100
; measured at
I
R
= 3 mA; see Fig.8
16
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
208
K/W
2003 Jul 02
4
Philips Semiconductors
Product specification
High-voltage switching diode array
BAS21VD
handbook, halfpage
0
100
200
300
200
0
100
MBG442
Tamb (
o
C)
IF
(mA)
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on a FR4 printed-circuit board.
handbook, halfpage
0
2
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
Fig.3
Forward current as a function of a forward
voltage.
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
handbook, halfpage
10
1
10
10
3
10
2
10
2
10
4
10
5
1
MLE165
tp (
A)
IFSM
(A)
Fig.4 Maximum permissible non-repetitive peak
forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, halfpage
10
2
10
200
0
MBG381
100
Tj (
o
C)
IR
(
A)
1
10
2
10
1
(1)
(2)
Fig.5
Reverse current as a function of junction
temperature.
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
2003 Jul 02
5
Philips Semiconductors
Product specification
High-voltage switching diode array
BAS21VD
handbook, halfpage
0
10
VR (V)
Cd
(pF)
20
40
0.6
0.5
0.3
0.2
0.4
30
MLE166
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
50
100
200
VR
(V)
300
0
100
200
150
MLE167
Tamb (
C)
Fig.7
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Reverse recovery voltage test circuit and waveforms.
I
R
= 3 mA.
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