DATA SHEET
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
DISCRETE SEMICONDUCTORS
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
book, halfpage
M3D088
1999 May 21
2
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 90 V
Repetitive peak reverse voltage:
max. 110 V
Repetitive peak forward current:
max. 600 mA
Repetitive peak reverse current:
max. 600 mA.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
TYPE NUMBER
MARKING
CODE
BAS29
L20
BAS31
L21
BAS35
L22
PINNING
PIN
DESCRIPTION
BAS29
BAS31
BAS35
1
anode
anode
cathode (k1)
2
not connected
cathode
cathode (k2)
3
cathode
common connection
common anode
Fig.1 Simplified outline (SOT23) and symbols.
handbook, halfpage
2
1
3
a. Simplified outline.
c. BAS31 diode.
b. BAS29 diode.
d. BAS35 diode.
MAM233
1
2
3
1
2
3
1
2
n.c.
3
1999 May 21
3
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
110
V
V
R
continuous reverse voltage
-
90
V
I
F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
250
mA
double diode loaded; see Fig.2;
note 1
-
150
mA
I
FRM
repetitive peak forward current
-
600
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
10
A
t = 100
s
-
4
A
t = 1 s
-
0.75
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
I
RRM
repetitive peak reverse current
-
600
mA
E
RRM
repetitive peak reverse energy
t
p
50
s; f
20 Hz; T
j
= 25
C
-
5
mJ
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 May 21
4
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
-
750
mV
I
F
= 50 mA
-
840
mV
I
F
= 100 mA
-
900
mV
I
F
= 200 mA
-
1
V
I
F
= 400 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= 90 V
-
100
nA
V
R
= 90 V; T
j
= 150
C
-
100
A
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 1 mA
120
170
V
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
35
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.7
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
360
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 21
5
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
100
(1)
(2)
200
300
200
0
100
MBG440
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
600
0
200
400
MBH280
1
IF
(mA)
VF (V)
(1)
(2)
(3)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBH327
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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