1996 Mar 13
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS45A
FEATURES
Continuous reverse voltage:
max. 125 V
Repetitive peak forward current:
max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5
s.
APPLICATION
Low leakage current applications.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM156
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
125
V
V
R
continuous reverse voltage
-
125
V
I
F
continuous forward current
see Fig.2; note 1
-
250
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25
C prior to
surge; see Fig.4
t
p
= 1
s
-
4
A
t
p
= 1 ms
-
1
A
t
p
= 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C
-
300
mW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1996 Mar 13
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS45A
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
-
780
mV
I
F
= 10 mA
-
860
mV
I
F
= 100 mA
-
1000
mV
I
R
reverse current
see Fig.5
V
R
= 125 V; E
max
= 100 lx
-
1
nA
V
R
= 30 V; T
j
= 125
C; E
max
= 100 lx
-
300
nA
V
R
= 125 V; T
j
= 125
C; E
max
= 100 lx
-
500
nA
V
R
= 125 V; T
j
= 150
C; E
max
= 100 lx
-
2
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
4
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
1.5
-
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
8 mm from the body
300
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
1996 Mar 13
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS45A
GRAPHICAL DATA
Device mounted on a printed-circuit board without metallization pad.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
100
IF
(mA)
200
300
0
100
200
MBG522
Tamb (
o
C)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1.0
0.5
1.5
300
0
100
200
MBG523
VF (V)
IF
(mA)
(1)
(2)
(3)
Fig.4
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents;T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Mar 13
5
Philips Semiconductors
Product specification
Low-leakage diode
BAS45A
V
R
= 125 V.
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
10
4
10
3
10
2
10
10
1
150
50
0
MBD456
100
1
I R
(nA)
T ( C)
o
j
typ
max
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
15
5
3
2
0
1
MBG524
VR (V)
Cd
(pF)
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery time test circuit and waveforms.
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