1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
BAS55
FEATURES
Small plastic SMD package
High switching speed: max. 6 ns
Continuous reverse voltage:
max. 60 V
Repetitive peak reverse voltage:
max. 60 V
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
High-speed switching in surface
mounted circuits.
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: L5p.
handbook, halfpage
2
1
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
60
V
V
R
continuous reverse voltage
-
60
V
I
F
continuous forward current
see Fig.2; note 1
-
250
mA
I
FRM
repetitive peak forward current
-
600
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 10 ms
-
1.7
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed diode
BAS55
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Note
1. T
amb
= 25
C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3; I
F
= 200 mA; DC value;
note 1
-
1.0
V
I
R
reverse current
see Fig.5
V
R
= 60 V
-
100
nA
V
R
= 60 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 400 mA to
I
R
= 400 mA; R
L
= 100
;
measured at I
R
= 40 mA; see Fig.7
-
6
ns
V
fr
forward recovery voltage
when switched to I
F
= 400 mA;
t
r
= 30 ns; see Fig.8
-
2
V
when switched to I
F
= 400 mA;
t
r
= 100 ns; see Fig.8
-
1.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
330
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed diode
BAS55
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG441
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
2
300
0
100
200
MBH279
1
IF
(mA)
VF (V)
T
j
= 25
C.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 10
5
Philips Semiconductors
Product specification
High-speed diode
BAS55
Fig.5
Reverse current as a function of
junction temperature.
(1) V
R
= 60 V; maximum values.
(2) V
R
= 60 V; typical values.
handbook, halfpage
10
200
0
MBH282
100
Tj (
o
C)
IR
(
A)
1
10
-
2
10
-
1
10
2
(1)
(2)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
VR (V)
2.0
Cd
(pF)
1.5
0.5
0
1.0
MBH283
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