1996 Oct 01
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for "automatic placement"
and as such it can withstand
immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
k
a
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
50
V
I
F
continuous forward current
-
200
mA
I
F(AV)
average forward current
see Fig.2
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 sec.;
0.5
-
500
mA
I
FSM
non-repetitive peak forward current
t
p
= 10 ms
5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
1996 Oct 01
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
300
mV
I
F
= 1 mA
380
mV
I
F
= 10 mA
450
mV
I
F
= 30 mA
600
mV
I
F
= 100 mA
900
mV
I
R
reverse current
V
R
= 40 V; see Fig.4; note 1
5
A
t
rr
reverse recovery time
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
; measured at I
R
= 1 mA; see Fig.6
4
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.5
8
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
320
K/W
1996 Oct 01
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
GRAPHICAL DATA
Fig.2 Derating curve.
handbook, halfpage
0
50
100
150
200
250
0
50
100
150
IF(AV)
(mA)
T ( C)
amb
o
MRA540
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(1) T
amb
= 85
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
10
5
10
(nA)
I
R
4
10
3
10
2
10
10
1
-
1
50
0
MGC686
10
20
30
40
V
R
(V)
(1)
(2)
(3)
Fig.4
Reverse current as a function of reverse
voltage; typical values.
f = 1 MHz.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
0
50
12
Cd
0
4
8
(pF)
MGC687
10
20
30
40
V
R
(V)
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