DATA SHEET
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30
DISCRETE SEMICONDUCTORS
BAT120 series
Schottky barrier double diodes
halfpage
M3D087
1998 Oct 30
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectification
Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
PINNING
PIN
BAT120
A
C
S
1
k
1
a
1
a
1
2
n.c.
n.c.
n.c.
3
k
2
a
2
k
2
4
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.1
Simplified outline
(SOT223) and pin
configuration.
age
4
1
2
3
MSB002 - 1
Top view
Fig.2
BAT120A diode
configuration (symbol).
page
MGL171
1
3
2 n.c.
4
Fig.3
BAT120C diode
configuration (symbol).
page
MGL172
1
3
2 n.c.
4
Fig.4
BAT120S diode
configuration (symbol).
page
MGL173
1
3
4
2 n.c.
MARKING
TYPE NUMBER
MARKING
CODE
BAT120A
AT120A
BAT120C
AT120C
BAT120S
AT120S
1998 Oct 30
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
25
V
I
F
continuous forward current
-
1
A
I
FSM
non-repetitive peak forward current
t
p
<
10 ms; half sinewave;
JEDEC method
-
10
A
I
RSM
non-repetitive peak reverse current
t
p
= 100
s
-
0.5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA
260
300
mV
I
F
= 1 A
400
450
mV
I
R
reverse current
V
R
= 20 V; note 1; see Fig.6
80
500
A
V
R
= 25 V; note 1; see Fig.6
-
1
mA
V
R
= 20 V; T
j
= 100
C; note 1
-
10
mA
C
d
diode capacitance
f = 1 MHz; V
R
= 4 V; see Fig.7
100
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
1998 Oct 30
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
GRAPHICAL DATA
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
Fig.5
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
1.0
VF (V)
IF
(mA)
0
0.2
0.4
0.6
0.8
10
4
10
3
10
2
10
1
MBK572
(1)
(2)
(3)
(4)
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
30
VR (V)
IR
(mA)
0
10
20
10
4
10
3
10
2
10
1
MBK573
(1)
(2)
(3)
(4)
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
30
VR (V)
Cd
(pF)
0
10
20
10
3
10
2
10
MBK571
1998 Oct 30
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
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