Document Outline
- FEATURES
- PINNING
- APPLICATIONS
- DESCRIPTION
- MARKING
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
DATA SHEET
Product specification
Supersedes data of 1998 Jan 21
1999 May 06
DISCRETE SEMICONDUCTORS
BAT721 series
Schottky barrier (double) diodes
age
M3D088
1999 May 06
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
FEATURES
Ultra high switching speed
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
BAT721
L7
BAT721A
L8
BAT721C
L9
BAT721S
L0
PINNING
PIN
BAT721
A
C
S
1
a
k
1
a
1
a
1
2
n.c.
k
2
a
2
k
2
3
k
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.1
Simplified outline
(SOT23) and pin
configuration.
handbook, 2 columns
2
1
3
MGC421
Top view
Fig.2
BAT721 single diode
configuration (symbol).
3
1
2
n.c.
MLC357
Fig.3
BAT721A diode
configuration (symbol).
3
1
2
MLC360
Fig.4
BAT721C diode
configuration (symbol).
3
1
2
MLC359
Fig.5
BAT721S diode
configuration (symbol).
3
1
2
MLC358
1999 May 06
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
200
mA
I
FSM
non-repetitive peak forward current
t
p
= 8.3 ms half sinewave;
JEDEC method
-
1
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
continuous forward voltage
see Fig.6
I
F
= 10 mA
-
300
mV
I
F
= 100 mA
-
420
mV
I
F
= 200 mA
-
550
mV
I
R
continuous reverse current
V
R
= 30 V; see Fig.7
-
15
A
V
R
= 30 V; T
j
= 100
C; see Fig.7
-
3
mA
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.8
40
50
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 06
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
GRAPHICAL DATA
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
VF (mV)
IF
(mA)
150
250
350
450
550
10
3
10
2
10
10
-
1
1
MBK575
(1)
(2)
(3)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
30 V
R (V)
IR
(mA)
0
10
20
1
10
-
1
10
-
2
10
-
3
MBK576
(1)
(2)
(3)
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
40
30
VR (V)
Cd
(pF)
0
10
20
10
2
10
1
MBK574
1999 May 06
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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