2001 Feb 27
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
FEATURES
Very low forward voltage
Very low reverse current
Guard ring protected
Very small SMD plastic package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption
applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
MARKING
PINNING
TYPE NUMBER
MARKING
CODE
BAT854W
81
BAT854AW
82
BAT854CW
83
BAT854SW
84
PIN
SYMBOL
BAT854W
1
a
2
n.c.
3
k
BAT854AW
1
k
1
2
k
2
3
a
1
,a
2
BAT854CW
1
a
1
2
a
2
3
k
1
, k
2
BAT854SW
1
a
1
2
k
2
3
k
1
, a
2
handbook, 2 columns
3
1
2
MBC870
Top view
Fig.1
Simplified outline
SOT323 and pin
configuration.
3
1
2
n.c.
MLC357
Fig.2
BAT854W single diode
configuration (symbol).
3
1
2
MLC360
Fig.3
BAT854AW diode
configuration (symbol).
3
1
2
MLC359
Fig.4
BAT854CW diode
configuration (symbol).
3
1
2
MLC358
Fig.5
BAT854SW diode
configuration (symbol).
2001 Feb 27
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
-
1
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 0.1 mA
200
-
mV
I
F
= 1 mA
260
-
mV
I
F
= 10 mA
340
-
mV
I
F
= 30 mA
-
420
mV
I
F
= 100 mA
-
550
mV
I
R
continuous reverse current
V
R
= 25 V; note 1; see Fig.7
-
0.5
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Fig.8
-
20
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
625
K/W
2001 Feb 27
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
GRAPHICAL DATA
handbook, halfpage
1.2
0.8
0.4
0
(1)
(3)
VF (V)
IF
(mA)
10
3
10
2
10
1
10
-
1
MLD546
(2)
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
20
10
0
VR (V)
IR
(
A)
30
10
3
10
2
10
1
10
-
1
MLD547
(1)
(2)
(3)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
VR (V)
Cd
(pF)
10
20
40
20
0
16
30
12
8
4
MLD548
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2001 Feb 27
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
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