1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
BAX18
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 2 A.
APPLICATIONS
Rectifier applications.
DESCRIPTION
The BAX18 is a general purpose diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
75
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
500
mA
I
FRM
repetitive peak forward current
-
2000
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
55
A
t = 100
s
-
15
A
t = 10 ms
-
9
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
450
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
BAX18
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 300 mA
-
1.0
V
I
F
= 2 A; T
j
= 150
C
-
1.5
V
I
R
reverse current
see Fig.5
V
R
= 75 V
-
5
A
V
R
= 75 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
35
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.7
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
1996 Sep 18
4
Philips Semiconductors
Product specification
General purpose diode
BAX18
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
handbook, halfpage
0
100
200
400
500
300
200
0
100
MBG455
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
3
0
1
2
MBG467
VF (V)
IF
(A)
(1) (2)
(3)
(4)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 150
C; maximum values.
(4) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG702
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 18
5
Philips Semiconductors
Product specification
General purpose diode
BAX18
Fig.5 Reverse current as a function of junction temperature.
handbook, full pagewidth
0
100
200
10
-
1
10
-
2
10
1
10
2
10
3
10
4
MBG697
IR
(
A)
Tj (
oC)
V
R
= 75 V.
Solid line; maximum values. Dotted line; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
VR (V)
40
Cd
(pF)
30
10
0
20
MGD003
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