2001 Oct 12
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
BB201
FEATURES
Excellent linearity
C1: 95 pF; C7.5: 27.6 pF
C1 to C7.5 ratio: min. 3.1
Very low series resistance
Small plastic SMD package.
APPLICATIONS
Electronic tuning in FM-radio
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB201 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB201
SCp
PIN
DESCRIPTION
1
anode (a
1
)
2
anode (a
2
)
3
common cathode
handbook, halfpage
2
1
3
MAM169
2
1
3
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
15
V
I
F
continuous forward current
-
20
mA
T
stg
storage temperature range
-
55
+125
C
T
j
operating junction temperature
-
55
+125
C
2001 Oct 12
3
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
BB201
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
I
R
reverse current
V
R
= 15 V
-
-
10
nA
V
R
= 15 V; T
j
= 85
C
-
-
200
nA
r
S
diode series resistance
f = 100 MHz; V
R
= 3 V
-
0.25
0.5
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz
89
95
102
pF
V
R
= 3 V; f = 1 MHz
-
60
-
pF
V
R
= 7.5 V; f = 1 MHz
25.5
27.6
29.7
pF
V
R
= 8 V; f = 1 MHz
-
25.5
-
pF
capacitance ratio
f = 1 MHz
3.1
-
3.8
C
d 1V
(
)
C
d 7.5V
(
)
--------------------
GRAPHICAL DATA
handbook, full pagewidth
0
140
100
120
20
40
60
80
MGU477
10
-
1
1
10
Cd
(pF)
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
2001 Oct 12
4
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
BB201
handbook, halfpage
100
Tj (
C)
0
20
40
60
IR
(nA)
80
10
3
10
2
10
1
MGU478
Fig.3
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
-
3
10
-
4
10
-
5
MGU479
10
-
1
1
TCd
(K
-
1
)
10
VR (V)
10
2
Fig.4
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
5
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
BB201
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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