DATA SHEET
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 26
DISCRETE SEMICONDUCTORS
BC368
NPN medium power transistor
book, halfpage
M3D186
1999 Apr 26
2
Philips Semiconductors
Product specification
NPN medium power transistor
BC368
FEATURES
High current (1 A)
Low voltage (20 V).
APPLICATIONS
General purpose switching and amplification
Power applications such as audio output stages.
DESCRIPTION
NPN medium power transistor in a TO-92; SOT54 plastic
package. PNP complement: BC369.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM259
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
32
V
V
CEO
collector-emitter voltage
open base
-
20
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
2
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
0.83
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 26
3
Philips Semiconductors
Product specification
NPN medium power transistor
BC368
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 25 V
-
100
nA
I
E
= 0; V
CB
= 25 V; T
j
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
100
nA
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 10 V
50
-
I
C
= 500 mA; V
CE
= 1 V; see Fig.2
85
375
I
C
= 1 A; V
CE
= 1 V; see Fig.2
60
-
V
CEsat
collector-emitter saturation voltage
I
C
= 1 A; I
B
= 100 mA
-
500
mV
V
BE
base-emitter voltage
I
C
= 5 mA; V
CE
= 10 V
-
700
mV
I
C
= 1 A; V
CE
= 1 V
-
1
V
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
40
-
MHz
DC current gain ratio of the
complementary pairs
I
C
= 500 mA;
V
CE
= 1 V
-
1.6
h
FE1
h
FE2
-----------
1999 Apr 26
4
Philips Semiconductors
Product specification
NPN medium power transistor
BC368
Fig.2 DC current gain; typical values.
V
CE
= 1 V.
handbook, full pagewidth
0
100
300
250
200
150
50
MGD844
hFE
10
-
1
1
IC (mA)
10
10
2
10
4
10
3
1999 Apr 26
5
Philips Semiconductors
Product specification
NPN medium power transistor
BC368
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
PDF 
ZIP