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Электронный компонент: BC517

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DATA SHEET
Product specification
Supersedes data of 1996 Sep 30
1998 Jun 24
DISCRETE SEMICONDUCTORS
BAS81; BAS82; BAS83
Schottky barrier diodes
lfpage
M3D121
1998 Jun 24
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a
hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
"automatic placement" and as such it
can withstand immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
k
a
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
BAS81
-
40
V
BAS82
-
50
V
BAS83
-
60
V
I
F
continuous forward current
-
30
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
150
mA
I
FSM
non-repetitive peak forward current
t
p
= 1 s
-
500
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
1998 Jun 24
3
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
330
mV
I
F
= 1 mA
410
mV
I
F
= 15 mA
1
V
I
R
reverse current
V
R
= V
Rmax
; see Fig.3
200
nA
C
d
diode capacitance
f = 1 MHz; V
R
= 2 V; see Fig.4
1.6
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
320
K/W
1998 Jun 24
4
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
1.0
0
10
I
F
2
MGC690
10
(mA)
1
(1) (2) (3)
10
-
1
0.2
0.4
0.6
0.8
V
F
(V)
(1) (2) (3)
(1) T
amb
= 85
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
4
10
(nA)
I
R
3
10
2
10
10
-
2
10
-
1
60
20
0
MGC689
40
V
R
(V)
1
(1)
(2)
(3)
(1) T
amb
= 85
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
0
0.5
1.0
1.5
2.0
0
15
30
45
60
MGC688
Cd
(pF)
V (V)
R
1998 Jun 24
5
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Note
1. The marking band indicates the cathode.
SOD80C
100H01
97-06-20
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
UNIT
D
mm
1.60
1.45
3.7
3.3
0.3
H
L
DIMENSIONS (mm are the original dimensions)
H
D
L
L
(1)
0
1
2 mm
scale
k
a