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Электронный компонент: BC640

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DATA SHEET
Product specification
Supersedes data of 1997 Mar 07
1999 Apr 23
DISCRETE SEMICONDUCTORS
BC636; BC638; BC640
PNP medium power transistors
book, halfpage
M3D186
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NP complements: BC635, BC637 and BC639.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC636
-
-
45
V
BC638
-
-
60
V
BC640
-
-
100
V
V
CEO
collector-emitter voltage
open base
BC636
-
-
45
V
BC638
-
-
60
V
BC640
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
1.5
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
0.83
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
100
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
2 V; see Fig.2
I
C
=
-
5 mA
40
-
I
C
=
-
150 mA
63
250
I
C
=
-
500 mA
25
-
DC current gain
I
C
=
-
150 mA; V
CE
=
-
2 V; see Fig.2
BC636-10
63
160
BC636-16; BC638-16; BC640-16
100
250
V
CEsat
collector-emitter saturation voltage
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
0.5
V
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
2 V
-
-
1
V
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
5 V; f = 100 MHz 100
-
MHz
DC current gain ratio of the
complementary pairs
I
C
= 150 mA;
V
CE
= 2 V
-
1.6
h
FE1
h
FE2
-----------
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH730
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
4
-
10
2
VCE =
-
2 V
1999 Apr 23
5
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3