DATA SHEET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
DISCRETE SEMICONDUCTORS
BC856F; BC857F; BC858F series
PNP general purpose transistors
M3D425
1999 May 21
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
FEATURES
Power dissipation comparable to SOT23
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM411
1
2
3
1
2
Top view
3
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AF
3A
BC857CF
3G
BC856BF
3B
BC858AF
3J
BC857AF
3E
BC858BF
3K
BC857BF
3F
BC858CF
3L
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC856AF; BC856BF
-
-
80
V
BC857AF; BC857BF; BC857CF
-
-
50
V
BC858AF; BC858BF; BC858CF
-
-
30
V
V
CEO
collector-emitter voltage
open base
BC856AF; BC856BF
-
-
65
BC857AF; BC857BF; BC857CF
-
-
45
BC858AF; BC858BF; BC858CF
-
-
30
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
BC856AF; BC857AF; BC858AF
125
250
BC856BF; BC857BF; BC858BF
220
475
BC857CF; BC858CF
420
800
V
CEsat
collector-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
200
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
400
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
750
mV
I
C
=
-
10 mA; V
CE
=
-
5 V
-
-
820
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
2.5
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 220 Hz
-
10
dB
1999 May 21
5
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490
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