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Электронный компонент: BCV65

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DATA SHEET
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 22
DISCRETE SEMICONDUCTORS
BCV65
NPN/PNP general purpose
transistor
M3D071
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BCV65
FEATURES
Low current (max. 100 mA)
Low voltage (max. 30 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
An NPN/PNP matched pair transistor in a SOT143B
plastic package.
MARKING
TYPE NUMBER
MARKING CODE
BCV65
97p
PINNING
PIN
DESCRIPTION
1, 3
collector
2
common base
4
common emitter
Fig.1
Simplified outline (SOT143B) and symbol.
handbook, halfpage
4
3
2
1
Top view
MAM333
1
2
3
4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
30
V
V
CEO
collector-emitter voltage
open base
-
30
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation (per device)
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BCV65
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. V
BEsat
decreases by approximately
1.7
mV/K with increasing temperature.
2. V
BE
decreases by approximately
2
mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
-
5
A
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 5 V
75
-
800
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
90
300
mV
I
C
= 100 mA; I
B
= 5 mA
-
250
650
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA; note 1
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V; note 2
580
650
750
mV
I
C
= 10 mA; V
CE
= 5 V; note 2
-
-
820
mV
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BCV65
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HE
y
w
v
Q
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e1
1.7
Lp
0.1
0.1
0.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
97-02-28
0
1
2 mm
scale
Plastic surface mounted package; 4 leads
SOT143B
D
HE
E
A
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
2
1
3
4
b1
bp
1999 Apr 22
5
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BCV65
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.