1999 Apr 19
2
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Medium power general purposes
Driver stages of audio amplifiers.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BCX54, BCX55 and BCX56.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCX51
AA
BCX52-16
AM
BCX51-10
AC
BCX53
AH
BCX51-16
AD
BCX53-10
AK
BCX52
AE
BCX53-16
AL
BCX52-10
AG
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
1
2
3
Bottom view
MAM297
3
2
1
1999 Apr 19
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BCX51
-
-
45
V
BCX52
-
-
60
V
BCX53
-
-
100
V
V
CEO
collector-emitter voltage
open base
BCX51
-
-
45
V
BCX52
-
-
60
V
BCX53
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
1.5
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
94
K/W
R
th j-s
thermal resistance from junction to soldering point note 1
14
K/W
1999 Apr 19
4
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
100
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 125
C
-
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
2 V; see Fig.2
I
C
=
-
5 mA
40
-
-
I
C
=
-
150 mA
63
-
250
I
C
=
-
500 mA
25
-
-
DC current gain
I
C
=
-
150 mA; V
CE
=
-
2 V; see Fig.2
BCX51-10; BCX52-10; BCX53-10
63
-
160
BCX51-16; BCX52-16; BCX53-16
100
-
250
V
CEsat
collector-emitter saturation voltage
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
500
mV
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
2 V
-
-
-
1
V
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
-
50
-
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH730
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
4
-
10
2
VCE =
-
2 V
1999 Apr 19
5
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89
97-02-28
w
M
e
1
e
E
HE
B
0
2
4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
1
2
3
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
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