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Электронный компонент: BCY58X

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DATA SHEET
Product specification
Supersedes data of 1997 Jun 16
1999 Apr 08
DISCRETE SEMICONDUCTORS
BCV61
NPN general purpose double
transistor
M3D071
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
FEATURES
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs.
APPLICATIONS
For use in applications where the working point must be
independent of temperature
Current mirrors.
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCV61
1Mp
BCV61B
1Kp
BCV61A
1Jp
BCV61C
1Lp
PINNING
PIN
DESCRIPTION
1
collector TR2; base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
Fig.1 Simplified outline (SOT143B) and symbol.
handbook, halfpage
4
1
2
3
MAM293
Top view
2
1
3
4
TR1
TR2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage TR1
open emitter
-
30
V
V
CEO
collector-emitter voltage TR1
open base
-
30
V
V
EBS
emitter-base voltage
V
CE
= 0
-
6
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current TR1
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Transistor TR1
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 100
A; V
CE
= 5 V
100
-
-
I
C
= 2 mA; V
CE
= 5 V
110
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
90
250
mV
I
C
= 100 mA; I
B
= 5 mA
-
200
600
mV
V
BEsat
base-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA; note 1
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V; note 2
580
660
700
mV
I
C
= 10 mA; V
CE
= 5 V; note 2
-
-
770
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
2.5
-
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
= 200
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
Transistor TR2
V
EBS
base-emitter forward voltage V
CB
= 0; I
E
=
-
250 mA
-
-
-
1.8
V
V
CB
= 0; I
E
=
-
10
A
-
400
-
-
mV
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 5 V
BCV61A
110
-
220
BCV61B
200
-
450
BCV61C
420
-
800
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
Notes
1. Decreasing 1.7 mV/
C with increasing temperature.
2. Decreasing 2 mV/
C with increasing temperature.
3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
Transistors TR1 and TR2
current matching of
transistors TR1 and TR2
I
E2
=
-
0.5 mA; V
CE1
= 5 V;
T
amb
25
C
0.7
-
1.3
I
E2
=
-
0.5 mA; V
CE1
= 5 V;
T
amb
150
C
0.7
-
1.3
I
E2
emitter current for thermal
stability of I
C1
V
CE1
= 5 V; note 3; (see Fig.2)
-
-
-
5
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
C1
I
E2
-------
Fig.2 Test circuit current matching.
V
CE1
= 5 V; device, without emitter resistors, mounted on an
FR4 printed-circuit board.
Voltage drop at contacts: V
CO
2
3
---
<
U
T
^
=16 mV
handbook, halfpage
MBK078
A
VCO
IC1
VCO
3
4
TR2
IE2 = constant
VCE1
TR1
2
1
Fig.3 BCV61 with emitter resistors.
handbook, halfpage
MBK079
A
IC1
3
4
TR2
IE2 = constant
RE
RE
VCE1
TR1
2
1
1999 Apr 08
5
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.
handbook, full pagewidth
0
30
10
20
MBK082
10
-
1
1
VCE1max
(V)
10
RE (
)
10
2
IE2 =
1 mA
5 mA
10 mA
50 mA
(see Fig.3).
I
C1
I
E2
--------
1.3
=
1999 Apr 08
6
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HE
y
w
v
Q
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e1
1.7
Lp
0.1
0.1
0.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
97-02-28
0
1
2 mm
scale
Plastic surface mounted package; 4 leads
SOT143B
D
HE
E
A
B
v
M
A
X
A
A1
Lp
Q
detail X
c
y
w
M
e1
e
B
2
1
3
4
b1
bp
1999 Apr 08
7
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 08
Document order number:
9397 750 05554