DATA SHEET
Product specification
Supersedes data of 1998 May 29
1999 Apr 21
DISCRETE SEMICONDUCTORS
BD830
PNP power transistor
book, halfpage
M3D067
1999 Apr 21
2
Philips Semiconductors
Product specification
PNP power transistor
BD830
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
General purpose
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-202; SOT128B plastic
package. NPN complement: BD829.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
Fig.1
Simplified outline (TO-202; SOT128B)
and symbol.
handbook, halfpage
2
1
3
MAM304
1 2 3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
100
V
V
CEO
collector-emitter voltage
open base
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
1.5
A
I
BM
peak base current
-
-
500
mA
P
tot
total power dissipation
T
amb
25
C
-
2
W
T
mb
50
C
-
8
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 21
3
Philips Semiconductors
Product specification
PNP power transistor
BD830
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
62.5
K/W
R
th j-mb
thermal resistance from junction to mounting base
12.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
100
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 125
C
-
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
2 V; see Fig.2
I
C
=
-
5 mA
40
-
-
I
C
=
-
150 mA
63
-
250
I
C
=
-
500 mA
25
-
-
V
CEsat
collector-emitter saturation voltage I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
500
mV
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
2 V
-
-
-
1
V
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
5 V; f = 100 MHz
-
75
-
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH730
-
10
-
1
hFE
-
1
IC (mA)
-
10
-
10
3
-
10
4
-
10
2
VCE =
-
2 V
1999 Apr 21
4
Philips Semiconductors
Product specification
PNP power transistor
BD830
PACKAGE OUTLINE
UNIT
bp
D
E
1
L1
L2
(1)
max
L
c
c1
E
P
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
2.54
13.3
12.2
e1
5.08
e
HE
24.2
23.8
2.4
2.0
3.8
3.6
P1
3.9
3.7
0.25
1.7
1.5
DIMENSIONS (mm are the original dimensions)
2.5
SOT128B
TO-202
97-02-28
A
c
1
D
E
L1
L2
L
bp
c
E1
HE
P
Q
A
P1
4.6
4.4
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
e
e1
1
2
3
0
5
10 mm
scale
w
M
Note
1. Plastic flash allowed within this zone
1999 Apr 21
5
Philips Semiconductors
Product specification
PNP power transistor
BD830
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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