DATA SHEET
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 29
DISCRETE SEMICONDUCTORS
BDL32
PNP BISS-transistor
ok, halfpage
M3D087
1999 Apr 29
2
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
FEATURES
High current (max. 5 A)
Low voltage (max. 10 V)
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. NPN complement: BDL31.
PINNING
PIN
DESCRIPTION
1
base
2
not connected
3
emitter
4
collector
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM373
Top view
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
15
V
V
CEO
collector-emitter voltage
open base
-
-
10
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
5
A
I
CM
peak collector current
-
-
10
A
I
BM
peak base current
-
-
1
A
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.35
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
92
K/W
R
th j-s
thermal resistance from junction to soldering point
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
10 V
-
-
50
nA
I
E
= 0; V
CB
=
-
10 V; T
j
= 150
C
-
-
50
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
50
nA
h
FE
DC current gain
V
CE
=
-
2 V; note 1
I
C
=
-
0.5 A
200
-
I
C
=
-
1 A
180
-
I
C
=
-
3 A
120
-
I
C
=
-
5 A
50
-
V
CE
=
-
1 V; I
C
=
-
2 A; note 1
120
-
V
CEsat
collector-emitter saturation voltage note 1
I
C
=
-
1 A; I
B
=
-
20 mA
-
-
250
mV
I
C
=
-
2 A; I
B
=
-
200 mA
-
-
400
mV
I
C
=
-
3 A; I
B
=
-
60 mA
-
-
600
mV
I
C
=
-
5 A; I
B
=
-
100 mA
-
-
1
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
5 V; f = 1 MHz
-
150
pF
f
T
transition frequency
I
C
=
-
500 mA; V
CE
=
-
10 V;
f = 100 MHz
100
-
MHz
1999 Apr 29
4
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
1999 Apr 29
5
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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