DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
DISCRETE SEMICONDUCTORS
BDX35; BDX36; BDX37
NPN switching transistors
book, halfpage
M3D100
1997 Apr 16
2
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
FEATURES
High current (max. 5 A)
Low voltage (max. 75 V).
APPLICATIONS
High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to the metal part of
the mounting surface
3
base
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BDX35
-
-
100
V
BDX36; BDX37
-
-
120
V
V
CEO
collector-emitter voltage
open base
BDX35; BDX36
-
-
60
V
BDX37
-
-
75
V
I
C
collector current (DC)
-
-
5
A
P
tot
total power dissipation
T
mb
75
C
-
-
15
W
h
FE
DC current gain
I
C
= 0.5 A; V
CE
= 10 V
45
-
450
f
T
transition frequency
I
C
= 0.5 A; V
CE
= 5 V; f = 100 MHz
-
100
-
MHz
t
off
turn-off time
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
-
0.5 A
-
350
500
ns
1997 Apr 16
3
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BDX35
-
100
V
BDX36; BDX37
-
120
V
V
CEO
collector-emitter voltage
open base
BDX35; BDX36
-
60
V
BDX37
-
75
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
5
A
I
CM
peak collector current
-
10
A
I
BM
peak base current
-
2
A
P
tot
total power dissipation
T
mb
75
C
-
15
W
T
amb
25
C
-
1.25
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BDX35
I
E
= 0; V
CB
= 80 V
-
-
100
nA
I
E
= 0; V
CB
= 80 V; T
j
= 100
C
-
-
10
A
I
CBO
collector cut-off current
BDX36; BDX37
I
E
= 0; V
CB
= 100 V
-
-
100
nA
I
E
= 0; V
CB
= 100 V; T
j
= 100
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 0.5 A; V
CE
= 10 V; see Fig.2
BDX35; BDX36
45
130
450
BDX37
45
80
450
V
CEsat
collector-emitter saturation voltage
I
C
= 5 A; I
B
= 0.5 A
-
-
900
mV
V
CEsat
collector-emitter saturation voltage
BDX35; BDX37
I
C
= 7 A; I
B
= 0.7 A
-
-
1.2
V
BDX36
I
C
= 10 A; I
B
= 1 A
-
-
2
V
1997 Apr 16
4
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
V
BEsat
base-emitter saturation voltage
I
C
= 5 A; I
B
= 0.5 A
-
-
1.7
V
V
BEsat
base-emitter saturation voltage
BDX35; BDX37
I
C
= 7 A; I
B
= 0.7 A
-
-
2
V
BDX36
I
C
= 10 A; I
B
= 1 A
-
-
2.5
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
40
60
pF
f
T
transition frequency
I
C
= 0.5 A; V
CE
= 5 V; f = 100 MHz
-
100
-
MHz
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
= 1 A; I
Bon
= 0.1 A; I
Boff
=
-
0.1 A
-
60
100
ns
I
Con
= 2 A; I
Bon
= 0.2 A; I
Boff
=
-
0.2 A
-
-
80
ns
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
-
0.5 A
-
180
300
ns
t
off
turn-off time
I
Con
= 1 A; I
Bon
= 0.1 A; I
Boff
=
-
0.1 A
-
600
800
ns
I
Con
= 2 A; I
Bon
= 0.2 A; I
Boff
=
-
0.2 A
-
450
700
ns
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
-
0.5 A
-
350
500
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
40
80
hFE
20
60
MGD840
10
-
1
1
IC (mA)
10
10
2
10
4
10
3
V
CE
= 1 V.
1997 Apr 16
5
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e1
L
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.88
0.65
2.7
2.3
0.60
0.45
11.1
10.5
7.8
7.2
2.29
e
4.58
0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3
1.5
0.9
L1
(1)
max
2.54
SOT32
TO-126
97-03-04
0
2.5
5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads
SOT32
D
P1
P
E
e1
A
L
Q
c
1
2
3
L1
w
M
e
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