DATA SHEET
Product specification
Supersedes data of 1996 Dec 05
1999 Apr 21
DISCRETE SEMICONDUCTORS
BF720; BF722
NPN high-voltage transistors
book, halfpage
M3D087
1999 Apr 21
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF720; BF722
FEATURES
Low feedback capacitance.
APPLICATIONS
Class-B video output stages of colour television
receivers
General purpose high voltage circuits.
DESCRIPTION
NPN transistors in a SOT223 plastic package.
PNP complement: BF723.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1
Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector
1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF720
-
300
V
BF722
-
250
V
V
CEO
collector-emitter voltage
open base
BF720
-
300
V
BF722
-
250
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.2
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 21
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF720; BF722
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
106
K/W
R
th j-s
thermal resistance from junction to soldering point
note 1
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 200 V
-
10
nA
I
E
= 0; V
CB
= 200 V; T
j
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
50
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
V
CEsat
collector-emitter saturation voltage I
C
= 30 mA; I
B
= 5 mA
-
0.6
V
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
-
1.6
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1999 Apr 21
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF720; BF722
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
1999 Apr 21
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF720; BF722
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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