Document Outline
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL RESISTANCE
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BF763
NPN 2 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
DESCRIPTION
NPN transistor in a plastic SOT54
(TO-92 variant) envelope.
It is primarily intended for use in RF
amplifiers and oscillators.
PINNING
PIN
DESCRIPTION
Code: F763
1
emitter
2
base
3
collector
Fig.1 SOT54.
1
3
2
MSB034
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CEO
collector-emitter breakdown voltage open base
15
-
-
V
I
C
DC collector current
-
-
25
mA
P
tot
total power dissipation
up to T
amb
= 60
C
-
-
360
mW
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 10 V; T
j
= 25
C
25
-
250
f
T
transition frequency
I
C
= 5 mA; V
CE
= 10 V; f = 100 MHz
-
1.8
-
GHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
15
V
V
CEO
collector-emitter voltage
open base
-
25
V
I
C
DC collector current
-
25
mA
P
tot
total power dissipation
up to T
amb
= 60
C
-
360
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-a
thermal resistance from junction to
ambient
in free air
250 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
15
-
-
V
V
(BR)CBO
collector-base breakdown voltage
I
C
= 10
A; I
E
= 0
25
-
-
V
V
CE sat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
-
-
0.5
V
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 10 V
25
-
250
f
T
transition frequency
I
C
= 5 mA; V
CE
= 10 V; f = 100 MHz
-
1.8
-
GHz
F
noise figure
I
C
= 5 mA; V
CE
= 10 V; f = 800 MHz;
T
amb
= 25
C; Z
s
= 60
-
5.0
-
dB
September 1995
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
max
L2
max
2.5
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
TO-92
SC-43
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
1
2
3
L2
e1
e
97-04-14
September 1995
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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