DATA SHEET
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC04
1997 Sep 03
DISCRETE SEMICONDUCTORS
BF820W; BF822W
NPN high-voltage transistors
1997 Sep 03
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
FEATURES
Low current (max. 50 mA)
High voltage (max. 300 V).
APPLICATIONS
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
MARKING
TYPE NUMBER
MARKING CODE
BF820W
1Vt
BF822W
1Wt
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF820W
-
300
V
BF822W
-
250
V
V
CEO
collector-emitter voltage
open base
BF820W
-
300
V
BF822W
-
250
V
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
200
mW
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
-
1.6
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF820W
-
300
V
BF822W
-
250
V
V
CEO
collector-emitter voltage
open base
BF820W
-
300
V
BF822W
-
250
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
50
mA
I
CM
peak collector current
-
100
mA
I
BM
peak base current
-
50
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 200 V
-
10
nA
I
E
= 0; V
CB
= 200 V; T
j
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
50
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
V
CEsat
collector-emitter saturation voltage
I
C
= 30 mA; I
B
= 5mA; note 1
-
600
mV
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
-
1.6
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
1997 Sep 03
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF820W; BF822W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
PDF 
ZIP