DATA SHEET
Preliminary specification
1999 Jun 29
DISCRETE SEMICONDUCTORS
BF862
N-channel junction FET
ook, halfpage
M3D088
1999 Jun 29
2
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
FEATURES
High transition frequency for excellent sensitivity in
AM car radios
High transfer admittance.
APPLICATIONS
Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
PINNING SOT23
PIN
DESCRIPTION
1
source
2
drain
3
gate
Fig.1 SOT23.
handbook, halfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
drain-source voltage
-
-
20
V
V
GS (off)
gate-source cut-off voltage
-
-0.7
-
V
I
DSS
drain-source current
10
-
25
mA
P
tot
total power dissipation
T
s
92 C
-
-
225
mW
|y
fs
|
transfer admittance
30
40
-
mS
T
j
junction temperature
-
-
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29
3
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL CHARACTERISTICS
Notes
1.
Soldering point of the gate lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
20
V
V
DG
drain-gate voltage
-
20
V
V
GS
gate-source voltage
-
-20
V
I
DS
drain-source current
-
40
mA
I
G
forward gate current
-
10
mA
P
tot
total power dissipation
T
s
92 C
-
225
mW
T
stg
storage temperature
-65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
260
K/W
Fig.2 Power derating curve.
handbook, halfpage
0
40
80
160
250
0
200
MGS298
120
150
100
50
Ptot
(mW)
Ts (C)
1999 Jun 29
4
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
GS
= 0; V
DS
= 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)GSS
gate-source breakdown voltage
I
GS
=
-1 A; V
DS
= 0
-20
-
-
V
V
GS
gate-source forward voltage
V
DS
= 0; I
G
= 1 mA
-
-
1
V
V
GS (off)
gate-source cut-off voltage
V
DS
= 8 V; I
D
= 1
A
-
-0.7
-
V
I
GSS
reverse gate current
V
GS
=
-15 V; V
DS
= 0
-
-
-1
nA
I
DSS
drain-source current
V
GS
= 0; V
DS
= 8 V
10
-
25
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
common source forward transfer
admittance
T
j
= 25
C
30
40
-
mS
g
os
common source output
conductance
T
j
= 25
C
-
-
400
S
C
iss
input capacitance
f = 1 MHz
-
10
-
pF
C
rss
reverse transfer capacitance
f = 1 MHz
-
2.5
-
pF
e
n
equivalent noise input voltage
f = 100 kHz
-
0.8
-
nV/
Hz
f
T
transition frequency
-
640
-
MHz
1999 Jun 29
5
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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