Document Outline
- FEATURES
- DESCRIPTION
- MARKING
- APPLICATIONS
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- APPLICATION INFORMATION
- PACKAGE OUTLINE
- DEFINITIONS
DATA SHEET
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Apr 07
DISCRETE SEMICONDUCTORS
Philips Semiconductors
BFG11; BFG11/X
NPN 2 GHz RF power transistor
1995 Apr 07
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
FEATURES
High power gain
High efficiency
Small size discrete power amplifier
1.9 GHz operating area
Gold metallization ensures excellent reliability.
APPLICATIONS
Common emitter class-AB operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistors encapsulated in a
plastic, 4-pin dual-emitter SOT143 package.
MARKING
TYPE NUMBER
CODE
BFG11
N72
BFG11/X
N73
PINNING
PIN
DESCRIPTION
BFG11 (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG11/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
1
2
3
4
QUICK REFERENCE DATA
RF performance at T
amb
= 25
C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(mW)
G
p
(dB)
c
(%)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
400
4
50
1995 Apr 07
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
8
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
500
mA
I
C(AV)
average collector current
-
500
mA
P
tot
total power dissipation
up to T
s
= 60
C; note 1; see Fig.2
-
400
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
200
0
MLC818
150
T ( C)
o
s
Ptot
(mW)
300
500
400
100
THERMAL CHARACTERISTICS
Note to the "Limiting values" and "Thermal characteristics"
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 60
C; note 1;
P
tot
= 400 mW
290
K/W
1995 Apr 07
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 0.1 mA; I
E
= 0
20
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base; I
C
= 10 mA; I
B
= 0
8
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector; I
E
= 0.1 mA; I
C
= 0
2.5
-
V
I
CES
collector cut-off current
V
CE
= 8 V; V
BE
= 0
-
100
A
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
25
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 3.6 V; f = 1 MHz
-
4
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 3.6 V; f = 1 MHz
-
3
pF
I
C
= 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLC848
0
10
4
8
4
0
3
6
2
1
C c
(pF)
VCB (V)
2
1995 Apr 07
5
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
APPLICATION INFORMATION
RF performance at T
amb
= 25
C in a common-emitter test circuit (see Fig.7).
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L
(mW)
G
p
(dB)
c
(%)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
1
400
4
50
typ. 5
typ. 70
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 400 mW.
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
handbook, halfpage
0
8
0
MLC849
2
4
6
100
20
40
60
80
200
400
600
800
G p
G p
(dB)
P (mW)
L
c
(%)
c
Fig.5
Load power as a function of drive power;
typical values.
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 400 mW.
handbook, halfpage
0
100
200
300
800
0
MLC850
600
400
200
P L
(mW)
P (mW)
D
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