DATA SHEET
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
DISCRETE SEMICONDUCTORS
BFG35
NPN 4 GHz wideband transistor
1999 Aug 24
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
page
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
-
18
V
I
C
DC collector current
-
-
150
mA
P
tot
total power dissipation
up to T
s
= 135
C (note 1)
-
-
1
W
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 10 V; T
j
= 25
C
25
70
-
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
4
-
GHz
G
UM
maximum unilateral power gain I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
15
-
dB
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
-
11
-
dB
V
o
output voltage
I
C
= 100 mA; V
CE
= 10 V;
d
im
=
-
60 dB; R
L
= 75
;
f
(p+q
-
r)
= 793.25 MHz; T
amb
= 25
C
-
750
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
18
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
150
mA
P
tot
total power dissipation
up to T
s
= 135
C (note 1)
-
1
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
1999 Aug 24
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. d
im
=
-
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
-
r)
= 793.25 MHz.
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 445.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 453.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 455.25 MHz;
measured at f
(p+q
-
r)
= 443.25 MHz.
4. I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
o
= 50 dBmV;
f
(p+q)
= 450 MHz; f
p
= 50 MHz; f
q
= 400 MHz.
5. I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
O
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 135
C (note 1)
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
1
A
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 10 V
25
70
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
2
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
10
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 10 V; f = 1 MHz
-
1.2
-
pF
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
4
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
15
-
dB
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
-
11
-
dB
V
o
output voltage
note 2
-
750
-
mV
note 3
-
800
-
mV
d
2
second order intermodulation
distortion
note 4
-
-
55
-
dB
note 5
-
-
57
-
dB
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
-------------------------------------------------------- dB.
log
=
1999 Aug 24
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
Fig.2 Intermodulation and second harmonic test circuit.
handbook, full pagewidth
MBB284
DUT
,,
,
VBB
C3
R1
L1
C1
C2
L2
input
75
R2
L6
R3
R4
L3
C4
C7
C5
C6
L5
output
75
VCC
L4
List of components (see test circuit)
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (
r
= 2.2);
thickness
1
/
16
inch; thickness of copper sheet
1
/
32
inch.
DESIGNATION
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C5, C6
multilayer ceramic capacitor
10 nF
2222 590 08627
C2, C7
multilayer ceramic capacitor
1 pF
2222 851 12108
C4 (note 1)
miniature ceramic plate capacitor
10 nF
2222 629 08103
L1
microstrip line
75
length 7mm;
width 2.5 mm
L2
microstrip line
75
length 22mm;
width 2.5 mm
L3 (note 1)
1.5 turns 0.4 mm copper wire
int. dia. 3 mm;
winding pitch 1 mm
L4
microstripline
75
length 19 mm;
width 2.5 mm
L5
Ferroxcube choke
5
H
3122 108 20153
L6 (note 1)
0.4 mm copper wire
25 nH
length 30 mm
R1
metal film resistor
10 k
2322 180 73103
R2 (note 1)
metal film resistor
200
2322 180 73201
R3, R4
metal film resistor
27
2322 180 73279
1999 Aug 24
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
Fig.3 Intermodulation test circuit printed circuit board.
handbook, full pagewidth
MBB299
75
input
75
output
C6
C7
C5
L5
VCC
VBB
R1
C3
C1
C2
L1
L2
L4
R3
R2
R4
C4
L6
L3
handbook, full pagewidth
MBB298
80 mm
60 mm
handbook, full pagewidth
MBB297
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