ChipFind - документация

Электронный компонент: BFG520/T1

Скачать:  PDF   ZIP
DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
July 1994
DISCRETE SEMICONDUCTORS
Philips Semiconductors
BFG520W
BFG520W/X; BFG520W/XR
NPN 9 GHz wideband transistor
July 1994
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520W
BFG520W/X; BFG520W/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV) and repeater amplifiers in
fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
MARKING
PINNING
TYPE NUMBER
CODE
BFG520W
N3
BFG520W/X
N4
BFG520W/XR
N5
PIN
DESCRIPTION
BFG520W (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG520W/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
BFG520W/XR (see Fig.2)
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT343.
handbook, 2 columns
4
3
2
1
Top view
MSB014
Fig.2 SOT343R.
handbook, 2 columns
3
4
1
2
Top view
MSB035
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CEO
collector-emitter voltage open base
-
-
15
V
I
C
collector current (DC)
-
-
70
mA
P
tot
total power dissipation
up to T
s
= 60
C
-
-
500
mW
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 6 V
60
120
250
C
re
feedback capacitance
I
C
= 0; V
CB
= 6 V; f = 1 MHz
-
0.35
-
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz; T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral
power gain
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
C
-
17
-
dB
|s
21
|
2
insertion power gain
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
C 16
17
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz
-
1.1
1.6
dB
July 1994
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520W
BFG520W/X; BFG520W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
70
mA
P
tot
total power dissipation
up to T
s
= 60
C; see Fig.3; note 1
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
0
MLB779
150
T ( C)
o
s
Ptot
(mW)
600
200
THERMAL CHARACTERISTICS
Note to the "Limiting values" and "Thermal characteristics"
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 60
C; note 1
180
K/W
July 1994
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520W
BFG520W/X; BFG520W/XR
CHARACTERISTICS
T
j
= 25
C (unless otherwise specified).
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
-
q)
= 898 MHz and f
(2q
-
p)
= 904 MHz.
3. d
im
=
-
60 dB (DIN45004B); I
C
= 20 mA; V
CE
= 6 V; V
p
= V
o
; V
q
= V
o
-
6 dB; V
r
= V
o
-
6 dB; R
L
= 75
;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
(p + q
-
r)
= 793.25 MHz.
4. I
C
= 20 mA; V
CE
= 6 V; V
o
= 75 mV; R
L
= 75
; T
amb
= 25
C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
(p + q)
= 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
open emitter; I
C
= 0.01 mA; I
E
= 0
-
-
20
V
V
(BR)CEO
collector-emitter breakdown
voltage
open base; I
C
= 10 mA; I
B
= 0
-
-
15
V
V
(BR)EBO
emitter-base breakdown
voltage
open collector; I
E
= 0.01 mA; I
C
= 0
-
-
2.5
V
I
CBO
collector cut-off current
open emitter; V
CB
= 6 V; I
E
= 0
-
-
50
nA
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 6 V
60
120
250
C
re
feedback capacitance
I
C
= 0; V
CB
= 6 V; f = 1 MHz
-
0.35
-
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral power
gain; note 1
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
-
17
-
dB
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
-
11
-
dB
|s
21
|
2
insertion power gain
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
16
17
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz
-
1.1
1.6
dB
s
=
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz
-
1.6
2.1
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
-
1.85
-
dB
P
L1
output power at 1 dB gain
compression
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
R
L
= 50
; T
amb
= 25
C
-
17
-
dBm
ITO
third order intercept point
note 2
-
26
-
dBm
V
o
output voltage
note 3
-
275
-
mV
d
2
second order intermodulation
distortion
note 4
-
-
50
-
dB
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
July 1994
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520W
BFG520W/X; BFG520W/XR
V
CE
= 6 V.
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
150
0
50
100
10
1
MLB807
1
10
10
2
I (mA)
C
FE
h
I
C
= 0; f = 1 MHz.
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLB808
0
0.6
0.4
0.2
0
2.5
5
7.5
10
V (V)
CB
C re
(pF)
Fig.6
Transition frequency as a function of
collector current; typical values.
f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
8
4
0
MLB809
12
f
(GHz)
10
2
10
1
T
I (mA)
C
V =
CE
3 V
6 V