DATA SHEET
Product specification
File under Discrete Semiconductors, SC05
1995 Sep 26
DISCRETE SEMICONDUCTORS
BFQ131
NPN video transistor
1995 Sep 26
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
FEATURES
Low output capacitance
High dissipation
High gain bandwidth product.
APPLICATIONS
Buffer stage in colour monitors
between the video amplifier and the
input of the video module
Pre-stage (cascode driver) in
discrete video amplifiers.
DESCRIPTION
NPN silicon transistor in a 3-lead
plastic SOT54 package.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1 Simplified outline SOT54.
1
3
2
MSB033
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
18
V
I
C
collector current (DC)
-
150
mA
P
tot
total power dissipation
up to T
s
= 60
C; see Fig.2
-
1.9
W
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V; see Fig.4
4
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CE
= 10 V; see Fig.5
1.2
-
pF
T
j
junction temperature
-
175
C
1995 Sep 26
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
= the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
18
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
150
mA
P
tot
total power dissipation
up to T
s
= 60
C; note 1; see Fig.2
-
1.9
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
150
2
1.5
0.5
0
1
MBG315
Ptot
(W)
Ts (
o
C)
1995 Sep 26
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
THERMAL CHARACTERISTICS
Note
1. T
s
= the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 60
C; note 1; P
tot
= 1.9 W
60
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 0.1 mA; I
E
= 0
25
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 0.1 mA; I
B
= 0
18
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 0.1 mA; I
C
= 0
2
-
-
V
I
CES
collector-emitter cut-off current
V
CE
= 18 V; V
BE
= 0
-
-
1
A
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 10 V;
see Fig.3
25
-
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; see Fig.4
-
4
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CE
= 10 V; f = 1 MHz;
see Fig.5
-
1.2
-
pF
1995 Sep 26
5
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 10 V; T
j
= 25
C.
handbook, halfpage
0
120
80
40
0
40
80
160
MBB361
120
I (mA)
C
FE
h
Fig.4
Transition frequency as a function of
collector current; typical values.
V
CE
= 10 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
0
6
4
2
0
50
MBG317
100
150
200
fT
(MHz)
IC (mA)
Fig.5
Feedback capacitance as a function of
collector-emitter voltage; typical values.
f = 1 MHz; I
C
= 0; T
j
= 25
C.
handbook, halfpage
0
4
20
2
1.5
0.5
0
1
MBG316
8
12
16
Cre
(pF)
VCE (V)
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