DATA SHEET
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
DISCRETE SEMICONDUCTORS
BFQ225
NPN video transistor
1996 Sep 04
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
APPLICATIONS
Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT128B package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline SOT128B.
handbook, halfpage
1
2
3
MGA323
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
100
V
I
C
collector current (DC)
-
100
mA
P
tot
total power dissipation
T
mb
= 25
C
-
3.75
W
f
T
transition frequency
I
C
= 25 mA; V
CE
= 10 V
1
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CB
= 10 V
1.7
-
pF
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
100
V
V
CER
collector-emitter voltage
R
BE
= 100
-
95
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
see Fig.2
-
100
mA
I
C(AV)
average collector current
see Fig.2
-
100
mA
P
tot
total power dissipation
T
mb
= 25
C; see Fig.3
-
3.75
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1996 Sep 04
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
Fig.2 DC SOAR.
T
mb
= 25
C.
handbook, halfpage
MBG486
10
2
10
10
2
10
3
10
3
10
VCE (V)
IC
(mA)
Fig.3 Power derating curve.
V
CE
50 V.
handbook, halfpage
0
4
Ptot
(W)
1
2
3
0
100
200
Tmb (
o
C)
MBG487
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 3.75 W; T
mb
= 25
C
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 0.1 mA; I
E
= 0
100
-
-
V
V
(BR)CER
collector-emitter breakdown voltage I
C
= 1 mA; R
BE
= 100
95
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
C
= 0; I
E
= 0.1 mA
3
-
-
V
I
CES
collector-emitter leakage current
V
CE
= 50 V; V
BE
= 0
-
-
100
A
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 10 V;
see Fig.4
20
-
-
f
T
transition frequency
I
C
= 25 mA; V
CE
= 10 V;
f = 500 MHz; see Fig.5
-
1
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.6
-
1.7
-
pF
1996 Sep 04
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
Fig.4
DC current gain as a function of collector
current; typical values.
V
CE
= 10 V; t
p
= 500
s.
handbook, halfpage
0
20
100
hFE
60
20
0
40
MBG488
40
60
80
IC (mA)
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 10 V; f = 500 MHz.
handbook, halfpage
0
0.4
0.8
1.2
10
2
MBG489
10
IC (mA)
20
50
fT
(MHz)
Fig.6
Feedback capacitance as a function of
collector-base voltage; typical values.
f = 1 MHz.
handbook, halfpage
0
2
10
Cre
(pF)
3
1
0
2
4
MBG490
4
6
8
VCB (V)
1996 Sep 04
5
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
PACKAGE OUTLINE
Fig.7 SOT128B.
Dimensions in mm.
handbook, full pagewidth
10.4 max
3.8
3.6
12.2
min
10
1
2
3
8.6
max
4.6
max
0.8 (3x)
2.54
2.54
2.5 max
(1)
2.4 max
3.8
24.2
max
0.65 max
0.56 max
1.6
0.6
MGA322
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