DATA SHEET
Product specification
Supersedes data of 1995 Oct 09
File under Discrete Semiconductors, SC05
1996 Sep 04
DISCRETE SEMICONDUCTORS
BFQ246
PNP video transistor
1996 Sep 04
2
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
APPLICATIONS
Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
PNP silicon transistor encapsulated
in a 4-lead plastic SOT223 package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
handbook, halfpage
4
1
2
3
MSB002 - 1
Top view
Fig.1 Simplified outline SOT223.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
100
V
I
C
collector current (DC)
-
-
100
mA
P
tot
total power dissipation
up to T
s
= 60
C
-
3
W
f
T
transition frequency
I
C
=
-
25 mA; V
CE
=
-
10 V
1
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CB
=
-
10 V
1.7
-
pF
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
100
V
V
CER
collector-emitter voltage
R
BE
= 100
-
-
95
V
V
EBO
emitter-base voltage
open collector
-
-
3
V
I
C
collector current (DC)
see Fig.2
-
-
100
mA
I
C(AV)
average collector current
see Fig.2
-
-
100
mA
P
tot
total power dissipation
up to T
s
= 60
C; note 1; see Fig.3
-
3
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1996 Sep 04
3
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
Fig.2 DC SOAR.
T
s
= 60
C.
handbook, halfpage
MBG511
-
10
2
-
10
-
10
2
-
10
3
-
10
3
-
10
VCE (V)
IC
(mA)
Fig.3 Power derating curve.
V
CE
-
50 V.
handbook, halfpage
0
4
Ptot
(W)
1
2
3
0
100
200
Ts (
o
C)
MBG512
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature of the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
tot
= 3 W; up to T
s
= 60
C; note 1
38.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
=
-
0.1 mA; I
E
= 0
-
100
-
-
V
V
(BR)CER
collector-emitter breakdown voltage I
C
=
-
1 mA; R
BE
= 100
-
95
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
C
= 0; I
E
=
-
0.1 mA
-
3
-
-
V
I
CES
collector-emitter leakage current
V
CE
=
-
50 V; V
BE
= 0
-
-
-
100
A
h
FE
DC current gain
I
C
=
-
25 mA; V
CE
=
-
10 V;
see Fig.4
20
-
-
f
T
transition frequency
I
C
=
-
25 mA; V
CE
=
-
10 V;
f = 500 MHz; see Fig.5
-
1
-
GHz
C
re
feedback capacitance
I
C
= 0; V
CB
=
-
10 V;
f = 1 MHz; see Fig.6
-
1.7
-
pF
1996 Sep 04
4
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
Fig.4
DC current gain as a function of collector
current; typical values.
V
CE
=
-
10 V; t
p
= 500
s.
handbook, halfpage
0
-
20
-
100
hFE
80
40
20
0
60
MBG513
-
40
-
60
-
80
IC (mA)
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
=
-
10 V; f = 500 MHz.
handbook, halfpage
0
0.4
0.8
1.2
-
10
2
MBG514
-
10
IC (mA)
-
20
-
50
fT
(MHz)
Fig.6
Feedback capacitance as a function of
collector-base voltage; typical values.
f = 1 MHz.
handbook, halfpage
0
-
2
-
10
Cre
(pF)
3
1
0
2
4
6
5
MBG515
-
4
-
6
-
8
VCB (V)
1996 Sep 04
5
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
PACKAGE OUTLINE
Fig.7 SOT223.
Dimensions in mm.
handbook, full pagewidth
6.7
6.3
0.95
0.85
2.3
0.80
0.60
4.6
3.1
2.9
3.7
3.3
7.3
6.7
A
B
0.2
A
1.80
max
16
16
o
max
10
o
max
0.10
0.01
0.32
0.24
4
1
2
3
MSA035 - 1
(4x)
0.1
B
M
M
S
seating plane
0.1 S
o
PDF 
ZIP