DATA SHEET
Product specification
Supersedes data November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
DISCRETE SEMICONDUCTORS
BFQ255; BFQ255A
PNP video transistors
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
BFQ255; BFQ255A
FEATURES
High breakdown voltages
Low output capacitance
High gain bandwidth
Good thermal stability
Gold metallization ensures
excellent reliability.
APPLICATIONS
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT128B
(TO-202) plastic package.
NPN complements: BFQ235 and
BFQ235A.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline
(SOT128B; TO-202).
page
1
2
3
MGA323
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BFQ255
-
-
-
100
V
BFQ255A
-
-
-
115
V
V
CER
collector-emitter voltage
R
BE
= 100
BFQ255
-
-
-
95
V
BFQ255A
-
-
-
110
V
I
C
collector current (DC)
-
-
-
300
mA
P
tot
total power dissipation
T
s
100
C; note 1
-
-
3
W
h
FE
DC current gain
I
C
=
-
50 mA; V
CE
=
-
10 V; T
amb
= 25
C
20
30
-
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V; f = 100 MHz;
T
amb
= 25
C
BFQ255
1
1.3
-
GHz
BFQ255A
0.8
1.2
-
GHz
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
BFQ255; BFQ255A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BFQ255
-
-
100
V
BFQ255A
-
-
115
V
V
CEO
collector-emitter voltage
open base
BFQ255
-
-
65
V
BFQ255A
-
-
95
V
V
CER
collector-emitter voltage
R
BE
= 100
BFQ255
-
-
95
V
BFQ255A
-
-
110
V
V
EBO
emitter-base voltage
open collector
-
-
3
V
I
C
collector current (DC)
-
-
300
mA
P
tot
total power dissipation
T
s
100
C; note 1; see Fig.3
-
3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
100
C; note 1
25
K/W
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ255; BFQ255A
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
=
-
0.1 mA; I
E
= 0
BFQ255
-
100
-
-
V
BFQ255A
-
115
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=
-
10 mA; I
B
= 0
BFQ255
-
66
-
-
V
BFQ255A
-
95
-
-
V
V
(BR)CER
collector-emitter breakdown voltage I
C
=
-
10 mA; R
BE
= 100
BFQ255
-
95
-
-
V
BFQ255A
-
110
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
=
-
0.1 mA; I
C
= 0
-
3
-
-
V
I
CES
collector-emitter cut-off current
I
B
= 0; V
CE
=
-
50 V
-
-
-
100
A
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
=
-
50 V
-
-
-
20
A
h
FE
DC current gain
I
C
=
-
50 mA; V
CE
=
-
10 V;
T
amb
= 25
C; see Fig.4
20
30
-
C
cb
collector-base capacitance
I
C
= 0; V
CB
=
-
10 V; f = 1 MHz;
see Fig.5
-
2
-
pF
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V;
f = 100 MHz; T
amb
= 25
C; see Fig.6
BFQ255
1
1.3
-
GHz
BFQ255A
0.8
1.2
-
GHz
Fig.2 DC SOAR.
handbook, halfpage
0
-
20
-
40
-
80
-
500
0
-
400
MEA333
-
60
-
300
-
200
-
100
IC
(mA)
VCEO (V)
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
2
0
MBB888
150
3
4
1
Ts (
o
C)
Ptot
(W)
1997 Oct 02
5
Philips Semiconductors
Product specification
PNP video transistors
BFQ255; BFQ255A
Fig.4
DC current gain as a function of
collector current; typical values.
V
CE
=
-
10 V; T
amb
= 25
C.
handbook, halfpage
0
50
40
30
10
-
100
-
200
MEA332
-
300
IC (mA)
hFE
20
f = 1 MHz; T
amb
= 25
C.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
-
10
-
20
-
40
6
1
5
MEA331
-
30
4
3
2
Ccb
(pF)
VCB (V)
V
CE
=
-
10 V; f = 100 MHz; T
amb
= 25
C.
Fig.6
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
MEA330
0
-
50
-
100
-
150
2.0
0.5
1.5
IC (mA)
fT
(GHz)
1.0
BFQ255
BFQ255A
PDF 
ZIP