Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC05
1997 Oct 02
DISCRETE SEMICONDUCTORS
BFQ256; BFQ256A
PNP video transistors
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
FEATURES
High breakdown voltages
Low output capacitance
High gain bandwidth
Good thermal stability
Gold metallization ensures
excellent reliability
Surface mounting.
APPLICATIONS
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT223
plastic package.
NPN complements: BFQ236 and
BFQ236A.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1
Simplified outline
(SOT223).
page
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BFQ256
-
-
-
100
V
BFQ256A
-
-
-
115
V
V
CER
collector-emitter voltage
R
BE
= 100
BFQ256
-
-
-
95
V
BFQ256A
-
-
-
110
V
I
C
collector current (DC)
-
-
-
300
mA
P
tot
total power dissipation
T
s
115
C; note 1
-
-
2
W
h
FE
DC current gain
I
C
=
-
50 mA; V
CE
=
-
10 V
20
30
-
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V; f = 100 MHz
BFQ256
1
1.3
-
GHz
BFQ256A
0.8
1.2
-
GHz
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector lead.
THERMAL CHARACTERISTICS
Notes
1. T
s
is the temperature at the soldering point of the collector lead.
2. Device mounted on a printed-circuit board measuring 40
40
1 mm (collector pad 35
17 mm).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BFQ256
-
-
100
V
BFQ256A
-
-
115
V
V
CEO
collector-emitter voltage
open base
BFQ256
-
-
65
V
BFQ256A
-
-
95
V
V
CER
collector-emitter voltage
R
BE
= 100
BFQ256
-
-
95
V
BFQ256A
-
-
110
V
V
EBO
emitter-base voltage
open collector
-
-
3
V
I
C
collector current (DC)
-
-
300
mA
P
tot
total power dissipation
T
s
115
C; note 1; see Fig.3
-
2
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
115
C; P
tot
= 2 W;
notes 1 and 2
30
K/W
1997 Oct 02
4
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
=
-
100
A; I
E
= 0
BFQ256
-
100
-
-
V
BFQ256A
-
115
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=
-
10 mA; I
B
= 0
BFQ256
-
65
-
-
V
BFQ256A
-
95
-
-
V
V
(BR)CER
collector-emitter breakdown voltage I
C
=
-
1 mA; R
BE
= 100
BFQ256
-
95
-
-
V
BFQ256A
-
110
-
-
V
I
CES
collector-emitter cut-off current
I
B
= 0; V
CE
=
-
50 V
-
-
-
100
A
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
=
-
50 V
-
-
-
20
A
h
FE
DC current gain
I
C
=
-
50 mA; V
CE
=
-
10 V; see Fig.4 20
30
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
1.9
-
pF
C
cb
collector-base capacitance
I
C
= i
c
= 0; V
CB
=
-
10 V; f = 1 MHz;
see Fig.6
-
1.6
-
pF
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V;
f = 100 MHz; see Fig.5
BFQ256
1
1.3
-
GHz
BFQ256A
0.8
1.2
-
GHz
Fig.2 DC SOAR.
R
BE
100
.
handbook, halfpage
MRA606
0
-
100
-
200
-
300
-
400
0
-
20
-
40
-
60
-
80
-
100
-
120
VCER (V)
IC
(mA)
BFQ256
BFQ256A
Fig.3 Power derating curve.
handbook, halfpage
MRA600
0
1
2
3
0
50
100
150
200
Ptot
(W)
Ts (
o
C)
1997 Oct 02
5
Philips Semiconductors
Product specification
PNP video transistors
BFQ256; BFQ256A
Fig.4
DC current gain as a function of
collector current; typical values.
V
CE
=
-
10 V.
handbook, halfpage
IC (mA)
hFE
0
50
40
30
20
-
100
-
200
-
300
MBB449
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
=
-
10 V; T
amb
= 25
C.
handbook, halfpage
0
2.0
1.5
1.0
0.5
-
50
-
100
-
150
MBC970
fT
(GHz)
IC (mA)
BFQ256
BFQ256A
Fig.6
Collector-base capacitance as a function of
collector-base voltage; typical values.
I
C
= 0; f = 1 MHz.
handbook, halfpage
1
2
3
4
5
0
-
5
-
10
-
15
-
20
-
25
-
30
-
35
MRA605
VCB (V)
Ccb
(pF)
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