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Электронный компонент: BFR31

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DATA SHEET
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
DISCRETE SEMICONDUCTORS
BFR30; BFR31
N-channel field-effect transistors
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1997 Dec 05
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
1. Drain and source are interchangeable.
PIN
SYMBOL
DESCRIPTION
1
d
drain
(1)
2
s
source
(1)
3
g
gate
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
Marking codes:
BFR30: M1p.
BFR31: M2p.
handbook, halfpage
1
2
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
25
V
V
GSO
gate-source voltage
open drain
-
-
25
V
P
tot
total power dissipation
T
amb
40
C
-
250
mW
I
DSS
drain current
V
GS
= 0; V
DS
= 10 V
BFR30
4
10
mA
BFR31
1
5
mA
y
fs
common-source transfer admittance
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz
BFR30
1
4
mS
BFR31
1.5
4.5
mS
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1997 Dec 05
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8
10
0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
25
V
V
DGO
drain-gate voltage
open source
-
-
25
V
V
GSO
gate-source voltage
open drain
-
-
25
V
I
D
drain current
-
10
mA
I
G
forward gate current (DC)
-
5
mA
P
tot
total power dissipation
T
amb
40
C; note 1; see Fig.2
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
Tamb (
C)
Ptot
(mW)
300
200
100
0
40
200
80
120
160
MDA245
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8
10
0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
430
K/W
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1997 Dec 05
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
GSS
gate cut-off current
V
DS
= 0; V
GS
=
-
10 V
-
-
0.2
nA
I
DSS
drain current
V
GS
= 0; V
DS
= 10 V
BFR30
4
10
mA
BFR31
1
5
mA
V
GS
gate-source voltage
I
D
= 1 mA; V
DS
= 10 V
BFR30
-
0.7
-
3
V
BFR31
0
-
1.3
V
V
GS
gate-source voltage
I
D
= 50
A; V
DS
= 10 V
BFR30
-
-
4
V
BFR31
-
-
2
V
V
GSoff
gate-source cut-off voltage
I
D
= 0.5 nA; V
DS
= 10 V
BFR30
-
-
5
V
BFR31
-
-
2.5
V
y
fs
common-source transfer admittance
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz;
T
amb
= 25
C
BFR30
1
4
mS
BFR31
1.5
4.5
mS
y
fs
common-source transfer admittance
I
D
= 200
A; V
DS
= 10 V; f = 1 kHz;
T
amb
= 25
C
BFR30
0.5
-
mS
BFR31
0.75
-
mS
y
os
common source output admittance
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz
BFR30
-
40
S
BFR31
-
25
S
y
os
common source output admittance
I
D
= 200
A; V
DS
= 10 V; f = 1 kHz
BFR30
-
20
S
BFR31
-
15
S
C
is
input capacitance
V
DS
= 10 V; f = 1 MHz
I
D
= 1 mA
-
4
pF
I
D
= 0.2 nA
-
4
pF
C
rs
feedback capacitance
V
DS
= 10 V; f = 1 MHz; T
amb
= 25
C
I
D
= 1 mA
-
1.5
pF
I
D
= 200
A
-
1.5
pF
V
n
equivalent input noise voltage
I
D
= 200
A; V
DS
= 10 V;
B = 0.6 to 100 Hz
-
0.5
V
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1997 Dec 05
5
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
Fig.3 Input characteristics.
BFR30.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
-
4
10
8
2
6
4
0
-
3
-
2
0
max
typ
min
VGS (V)
ID
(mA)
-
1
MDA657
Fig.4 Output characteristics; typical values.
BFR30.
T
j
= 25
C.
handbook, halfpage
0
10
10
0
2
4
6
8
2
4
6
8
MDA658
VDS (V)
ID
(mA)
VGS = 0 V
-
0.5
-
1.0
-
1.5
-
2.0
Fig.5 Input characteristics.
BFR31.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
-
5
0
5
0
1
2
3
4
-
4
-
3
-
2
-
1
MDA659
max
typ
min
VGS (V)
ID
(mA)
Fig.6 Output characteristics; typical values.
BFR31.
T
j
= 25
C.
handbook, halfpage
0
10
5
0
1
2
3
4
2
4
6
8
MDA660
VDS (V)
ID
(mA)
VGS = 0 V
-
0.2
-
0.4
-
0.6
-
0.8
-
1
-
1.2
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1997 Dec 05
6
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
Fig.7
Drain current as a function of junction
temperature; typical values.
BFR30.
V
DS
= 10 V.
handbook, halfpage
25
50
75
125
ID
(mA)
6
4
2
0
100
MDA661
Tj (
C)
VGS = 0 V
-
0.5
-
1.0
-
1.5
-
2.0
Fig.8 Drain current as a function of junction
temperature; typical values.
BFR31.
V
DS
= 10 V.
handbook, halfpage
-
1
-
1.2
25
50
75
125
ID
(mA)
6
4
2
0
100
MDA662
Tj (
C)
-
0.2
-
0.4
-
0.6
-
0.8
VGS =
0 V
Fig.9
Gate cut-off current as a function of junction
temperature; typical values.
V
GS
=
-
10 V; V
DS
= 0.
handbook, halfpage
200
100
50
IGSS
(nA)
0
150
Tj (
C)
10
1
10
-
1
10
-
2
10
-
3
MDA656
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
I
D
= 0.5 nA; V
DS
= 10 V; V
GS
= 0; T
j
= 25
C.
handbook, halfpage
0
10
-
6
0
-
2
-
4
2
IDSS (mA)
VGS(off)
(V)
4
6
8
MDA663
BFR31
BFR30
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1997 Dec 05
7
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
V
DS
= 10 V; f = 1 kHz; T
amb
= 25
C.
handbook, halfpage
0
7.5
5
2.5
0
2
ID (mA)
4
6
MDA664
yfs
(mA/V)
BFR30
BFR31
Fig.12 Common source output admittance as a
function of drain current; typical values.
V
DS
= 10 V; f = 1 kHz; T
amb
= 25
C.
handbook, halfpage
0
75
50
25
0
2
ID (mA)
4
6
BFR30
BFR31
MDA665
yos
(
A/V)
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
f = 1 kHz; T
amb
= 25
C.
(1) I
D
= 4 mA. (2) I
D
= 1 mA.
handbook, halfpage
30
(2)
BFR30
BFR31
0
10
20
VDS (V)
10
4
10
3
10
2
10
MDA666
|
yos
|
(
A/V)
(1)
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
V
DS
= 10 V; f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
0
-
5
5
0
1
2
3
4
-
1
-
2
-
3
Cis
(pF)
VGS (V)
-
4
MDA667
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1997 Dec 05
8
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
V
DS
= 10 V; f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
0
-
5
-
1
0
-
0.2
-
0.4
-
0.6
-
0.8
-
1
-
2
-
3
Crs
(pF)
VGS (V)
-
4
MDA668
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
V
DS
= 10 V; T
amb
= 25
C.
(1) BFR31; I
D
= 1 mA.
(2) BFR30; I
D
= 4 mA.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10
10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA669
(1)
(2)
e
n
(nV/ Hz)
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1997 Dec 05
9
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
Fig.17 Equivalent noise current source as a function of frequency; typical values.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10
10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA670
i n
(fA/ Hz)
(1)
(2)
V
DS
= 10 V; T
amb
= 25
C.
(1) BFR31; I
D
= 1 mA.
(2) BFR30; I
D
= 4 mA.
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1997 Dec 05
10
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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1997 Dec 05
11
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117067/00/02/pp12
Date of release: 1997 Dec 05
Document order number:
9397 750 03154