DATA SHEET
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
DISCRETE SEMICONDUCTORS
BFR92A
NPN 5 GHz wideband transistor
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
High power gain
Low noise figure
Low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
page
MSB003
Top view
1
2
3
Marking code: P2p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
-
20
V
V
CEO
collector-emitter voltage
-
15
V
I
C
collector current (DC)
-
25
mA
P
tot
total power dissipation
T
s
95
C
-
300
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
0.35
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
5
-
GHz
G
UM
maximum unilateral power gain
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
14
-
dB
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
C
8
-
dB
F
noise figure
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
s
=
opt
; T
amb
= 25
C
2.1
-
dB
V
O
output voltage
d
im
=
-
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; f
p
+ f
q
-
f
r
= 793.25 MHz
150
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
25
mA
P
tot
total power dissipation
T
s
95
C; note 1; see Fig.3
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
2. Measured on the same die in a SOT37 package (BFR90A).
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; VSWR
<
2; T
amb
= 25
C
V
p
= V
O
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
-
6 dB; f
r
= 805.25 MHz;
measured at f
p
+ f
q
-
f
r
= 793.25 MHz.
4. I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; VSWR
<
2; T
amb
= 25
C
V
p
= 60 mV at f
p
= 250 MHz;
V
q
= 60 mV at f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
95
C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 15 mA; V
CE
= 10 V; see Fig.4
40
90
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.5
-
0.6
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
-
1.2
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
-
0.35
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz;
see Fig.6
-
5
-
GHz
G
UM
maximum unilateral power
gain (note 1)
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
-
14
-
dB
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
C
-
8
-
dB
F
noise figure
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
s
=
opt
; T
amb
= 25
C;
see Figs 13 and 14
-
2.1
-
dB
I
C
= 5 mA; V
CE
= 10 V; f = 2 GHz;
s
=
opt
; T
amb
= 25
C;
see Figs 13 and 14
-
3
-
dB
V
O
output voltage
notes 2 and 3
-
150
-
mV
d
2
second order intermodulation
distortion
notes 2 and 4; see Fig.16
-
-
50
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
-------------------------------------------------------------- dB
=
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L1 = L3 = 5
H choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
handbook, full pagewidth
MBB269
18
2.2 nF
33 k
L2
L1
1 nF
75
input
300
1 nF
L3
2.2 nF
1 nF
0.82 pF
3.3 pF
DUT
75
output
VCC
VBB
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MEA425 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.4
DC current gain as a function of collector
current; typical values.
V
CE
= 10 V; T
j
= 25
C.
handbook, halfpage
0
10
20
30
120
0
40
80
MCD074
h FE
I (mA)
C
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
I
C
= i
c
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
5
10
20
1
0
0.8
MBB274
15
0.6
0.4
0.2
Cc
(pF)
VCB (V)
Fig.6
Transition frequency as a function of
collector current; typical values.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
0
10
20
30
6
0
2
4
MBB275
I (mA)
C
f T
(GHz)
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 10 V; f = 500 MHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
handbook, halfpage
0
30
20
10
0
25
MBB278
5
10
15
20
gain
(dB)
IC (mA)
MSG
GUM
Fig.8
Gain as a function of collector current;
typical values.
V
CE
= 10 V; f = 1 GHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
handbook, halfpage
0
30
20
10
0
25
MBB279
5
10
15
20
gain
(dB)
I (mA)
C
MSG
GUM
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