Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
DATA SHEET
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 23
DISCRETE SEMICONDUCTORS
BFV421
PNP high-voltage transistor
book, halfpage
M3D186
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
BFV421
FEATURES
High voltage
High transition frequency
Low output capacitance.
APPLICATIONS
Primarily intended for video applications (monitors).
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: BFV420.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
140
V
V
CEO
collector-emitter voltage
open base
-
-
100
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
100
mA
I
BM
peak base current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
830
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
BFV421
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for collector lead minimum
10
10 mm.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
100 V
-
-
100
nA
I
E
= 0; V
CB
=
-
100 V; T
amb
= 150
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
100
nA
h
FE
DC current gain
I
C
=
-
10 mA; V
CE
=
-
10 V
150
-
I
C
=
-
50 mA; V
CE
=
-
10 V
20
-
V
CEsat
collector-emitter saturation voltage
I
C
=
-
30 mA; I
B
=
-
5 mA
-
-
200
mV
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
=
-
25 V; f = 1 MHz
-
2.3
pF
f
T
transition frequency
I
C
=
-
20 mA; V
CE
=
-
20 V;
f = 100 MHz
150
-
MHz
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
BFV421
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
1999 Apr 23
5
Philips Semiconductors
Product specification
PNP high-voltage transistor
BFV421
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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