1.
Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features
s
Internally matched to 50
s
Wide frequency range (3.2 GHz at 3 dB bandwidth)
s
Flat 23 dB gain (
1 dB up to 2.7 GHz)
s
9 dBm output power at 1 dB compression point
s
Good linearity for low current (IP3
out
= 22 dBm)
s
Low second harmonic;
-
38 dBc at P
L
=
-
5 dBm
s
Unconditionally stable (K
1.2).
1.3 Applications
s
LNB IF amplifiers
s
Cable systems
s
ISM
s
General purpose.
1.4 Quick reference data
BGA2716
MMIC wideband amplifier
Rev. 02 -- 24 September 2004
Product data sheet
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
S
DC supply voltage
-
5
6
V
I
S
supply current
-
15.9
-
mA
s
21
2
insertion power gain
f = 1 GHz
-
22.9
-
dB
NF
noise figure
f = 1 GHz
-
5.3
-
dB
P
L(sat)
saturated load power
f = 1 GHz
-
11.6
-
dBm
9397 750 13292
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
2 of 14
Philips Semiconductors
BGA2716
MMIC wideband amplifier
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
1
V
S
2, 5
GND2
3
RF_OUT
4
GND1
6
RF_IN
SOT363
1
3
2
4
5
6
sym052
1
3
2, 5
6
4
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BGA2716
-
plastic surface mounted package; 6 leads
SOT363
Table 4:
Marking
Type number
Marking code
BGA2716
B7-
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
S
DC supply voltage
RF input AC
coupled
-
6
V
I
S
supply current
-
30
mA
P
tot
total power dissipation
T
sp
90
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
P
D
maximum drive power
-
-
10
dBm
9397 750 13292
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
3 of 14
Philips Semiconductors
BGA2716
MMIC wideband amplifier
6.
Thermal characteristics
7.
Characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-sp)
thermal resistance from junction
to solder point
P
tot
= 200 mW;
T
sp
90
C
300
K/W
Table 7:
Characteristics
V
S
= 5 V; I
S
= 15.9 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
S
supply current
13
15.9
21
mA
s
21
2
insertion power
gain
f = 100 MHz
21
22.1
23
dB
f = 1 GHz
22
22.9
24
dB
f = 1.8 GHz
22
23.1
25
dB
f = 2.2 GHz
21
22.8
24
dB
f = 2.6 GHz
20
22.1
24
dB
f = 3 GHz
19
20.8
22
dB
s
11
2
input return
losses
f = 1 GHz
15
17
-
dB
f = 2.2 GHz
10
12
-
dB
s
22
2
output return
losses
f = 1 GHz
10
12
-
dB
f = 2.2 GHz
9
11
-
dB
s
12
2
isolation
f = 1.6 GHz
30
31
-
dB
f = 2.2 GHz
33
35
-
dB
NF
noise figure
f = 1 GHz
-
5.3
5.4
dB
f = 2.2 GHz
-
5.5
5.6
dB
B
bandwidth
at
s
21
2
-
3 dB below flat
gain at 1 GHz
3
3.2
-
GHz
K
stability factor
f = 1 GHz
-
1.4
-
f = 2.2 GHz
-
1.9
-
P
L(sat)
saturated load
power
f = 1 GHz
10
11.6
-
dBm
f = 2.2 GHz
6
7.5
-
dBm
P
L(1dB)
load power
at 1 dB gain compression;
f = 1 GHz
8
8.9
-
dBm
at 1 dB gain compression;
f = 2.2 GHz
5
6.1
-
dBm
IM2
second order
intermodulation
product
at P
L
=
-
5 dBm;
f
0
= 1 GHz
36
38
-
dBc
IP3
in
input, third
order intercept
point
f = 1 GHz
-
2
-
0.7
-
dBm
f = 2.2 GHz
-
8
-
6.9
-
dBm
IP3
out
output, third
order intercept
point
f = 1 GHz
21
22.2
-
dBm
f = 2.2 GHz
15
15.9
-
dBm
9397 750 13292
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
4 of 14
Philips Semiconductors
BGA2716
MMIC wideband amplifier
8.
Application information
Figure 1
shows a typical application circuit for the BGA2716 MMIC. The device is
internally matched to 50
, and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.
Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2
shows the PCB layout, used for the standard demonstration board.
Fig 1.
Typical application circuit.
mgu436
RF_OUT
RF_IN
C1
L1
C2
C3
GND2
GND1
V
S
V
S
RF input
RF output
9397 750 13292
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 24 September 2004
5 of 14
Philips Semiconductors
BGA2716
MMIC wideband amplifier
8.1 Application examples
The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (see
Figure 3
).
Material = FR4; thickness = 0.6 mm,
r
= 4.6.
Fig 2.
PCB layout and demonstration board showing components.
001aab256
OUT
IN
PH
V
+
PHILIPS
OUT
IN
PH
V
+
PHILIPS
C3
C2
L1
C1
DUT
30 mm
30 mm
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