DATA SHEET
Product specification
Supersedes data of 1995 Sep 11
File under Discrete Semiconductors, SC16
1997 Apr 15
DISCRETE SEMICONDUCTORS
BGY1085A
CATV amplifier module
1997 Apr 15
2
Philips Semiconductors
Product specification
CATV amplifier module
BGY1085A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid high amplifier module for
CATV systems operating over a
frequency range of 40 to 1000 MHz
at a supply voltage of +24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5
+V
B
7
common
8
common
9
output
Fig.1 Simplified outline.
fpage
7
8
9
2
3
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 1000 MHz
18.5
-
dB
I
tot
total current consumption (DC) V
B
= 24 V
-
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
i
RF input voltage
-
65
dBmV
T
stg
storage temperature
-
40
+100
C
T
mb
operating mounting base temperature
-
20
+100
C
1997 Apr 15
3
Philips Semiconductors
Product specification
CATV amplifier module
BGY1085A
CHARACTERISTICS
Table 1
Bandwidth 40 to 1000 MHz; T
case
= 30
C; Z
S
= Z
L
= 75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
-
19
dB
f = 1000 MHz
18.5
-
-
dB
SL
slope cable equivalent
f = 40 to 1000 MHz
0
-
2
dB
FL
flatness of frequency response
f = 40 to 1000 MHz
-
-
0.3
dB
S
11
input return losses
f = 40 to 80 MHz
20
-
-
dB
f = 80 to 160 MHz
18.5
-
-
dB
f = 160 to 320 MHz
17
-
-
dB
f = 320 to 640 MHz
15.5
-
-
dB
f = 640 to 1000 MHz
14
-
-
dB
S
22
output return losses
f = 40 to 80 MHz
20
-
-
dB
f = 80 to 160 MHz
18.5
-
-
dB
f = 160 to 320 MHz
17
-
-
dB
f = 320 to 640 MHz
15.5
-
-
dB
f = 640 to 1000 MHz
14
-
-
dB
CTB
composite triple beat
85 channels flat;
V
o
= 44 dBmV;
measured at 595.25 MHz
-
-
-
58
dB
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
-
-
-
53
dB
150 channels flat;
V
o
= 40 dBmV;
measured at 985.25 MHz
-
-
53
-
dB
X
mod
cross modulation
85 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
-
58
dB
110 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
-
-
-
54
dB
150 channels flat;
V
o
= 40 dBmV;
measured at 55.25 MHz
-
-
54
-
dB
CSO
composite second order
distortion
85 channels flat;
V
o
= 44 dBmV;
measured at 596.5 MHz
-
-
-
60
dB
110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
-
-
-
56
dB
150 channels flat;
V
o
= 40 dBmV;
measured at 986.5 MHz
-
-
56
-
dB
1997 Apr 15
4
Philips Semiconductors
Product specification
CATV amplifier module
BGY1085A
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
3. f
p
= 55.25 MHz; V
p
= 40 dBmV;
f
q
= 931.25 MHz; V
q
= 40 dBmV;
measured at f
p
+ f
q
= 986.5 MHz.
4. f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 599.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 588.25 MHz.
5. f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 749.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
6. f
p
= 980.25 MHz; V
p
= V
o
;
f
q
= 987.25 MHz; V
q
= V
o
-
6 dB;
f
r
= 989.25 MHz; V
r
= V
o
-
6 dB;
measured at f
p
+ f
q
-
f
r
= 978.25 MHz.
7. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
d
2
second order distortion
note 1
-
-
-
72
dB
note 2
-
-
-
65
dB
note 3
-
-
68
-
dB
V
o
output voltage
d
im
=
-
60 dB
note 4
61
-
-
dBmV
note 5
60
-
-
dBmV
note 6
57
-
-
dBmV
F
noise figure
f = 50 MHz
-
-
5.5
dB
f = 550 MHz
-
-
6
dB
f = 600 MHz
-
-
6
dB
f = 650 MHz
-
-
6.5
dB
f = 750 MHz
-
-
7
dB
f = 860 MHz
-
-
7.5
dB
f = 1000 MHz
-
-
7.5
dB
I
tot
total current consumption (DC)
note 7
-
-
240
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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