Document Outline
- FEATURES
- DESCRIPTION
- PINNING - SOT123
- PIN CONFIGURATION
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL RESISTANCE
- CHARACTERISTICS
- APPLICATION INFORMATION FOR CLASS-B OPERATION
- Ruggedness in class-B- operation
- List of components (class-B test circuit)
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
September 1992
DISCRETE SEMICONDUCTORS
BLF225
VHF power MOS transistor
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
FEATURES
Easy power control
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k, halfpage
1
2
3
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
CW, class-B
175
12.5
30
>
8.5
>
60
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
40
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
9
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
68
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-mb
thermal resistance from junction to mounting base
2.6 K/W
R
th mb-h
thermal resistance from mounting base to heatsink
0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
handbook, halfpage
MRA915
10
-
1
10
2
1
1
10
10
ID
(A)
VDS (V)
10
2
(1)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
(1)
160
100
80
20
40
0
60
120
MGP122
Ptot
(W)
Th (
C)
(2)
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 30 mA
40
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 12.5 V
-
-
1
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 30 mA; V
DS
= 10 V
2
-
4.5
V
g
fs
forward transconductance
I
D
= 3.5 A; V
DS
= 10 V
1.5
2.2
-
S
R
DS(on)
drain-source on-state resistance
I
D
= 3.5 A; V
GS
= 15 V
-
0.25
0.35
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
-
16
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
120
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
140
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
-
20
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
6
-
6
2
10
2
MEA741
10
1
1
ID (A)
10
-
2
4
0
-
4
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V.
handbook, halfpage
MRA244
0
5
10
15
20
0
5
10
ID
(A)
VGS (V)
15
20
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
V
GS
= 15 V;
I
D
= 3.5 A.
handbook, halfpage
0
0.5
RDS(on)
(
)
0.4
0.3
0.2
0.1
0
50
100
Tj (
C)
150
MGP123
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
4
Cos
Cis
8
VDS (V)
16
600
400
0
200
MEA739
12
C
(pF)
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
30
40
50
60
0
4
8
VDS (V)
Crs
(pF)
12
16
MRA242
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