DATA SHEET
Product specification
File under Discrete Semiconductors, SC08b
October 1992
DISCRETE SEMICONDUCTORS
BLF543
UHF power MOS transistor
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
The devices are marked with a
V
GS
indication intended for matched
pair applications.
PINNING - SOT171
PIN
DESCRIPTION
1
source
2
source
3
gate
4
drain
5
source
6
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
fpage
MBA931 - 1
1
3
5
2
4
6
Top view
handbook, halfpage
s
d
g
MBB072 - 2
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
CW, class-B
500
28
10
>
12
>
50
CW, class-B
960
28
10
typ. 8
typ. 50
October 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
65
V
V
GS
gate-source voltage
-
20
V
I
D
DC drain current
-
2
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
25
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-mb
thermal resistance from junction to mounting base
7 K/W
R
th mb-h
thermal resistance from mounting base to heatsink
0.4 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
C.
handbook, halfpage
10
-
1
1
10
1
10
10
2
(1)
ID
(A)
VDS (V)
MRA991
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
40
30
10
0
20
120
MDA488
(2)
(1)
Ptot
(W)
Th (
C)
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 5 mA
65
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
0.5
mA
I
GSS
gate-source leakage current
V
GS
= 20 V; V
DS
= 0
-
-
1
A
V
GS(th)
gate-source threshold voltage
I
D
= 20 mA; V
DS
= 10 V
1
-
4
V
V
GS(th)
gate-source voltage difference of
matched pairs
I
D
= 20 mA; V
DS
= 10 V
-
-
100
mV
g
fs
forward transconductance
I
D
= 0.6 A; V
DS
= 10 V
300
450
-
mS
R
DS(on)
drain-source on-state resistance
I
D
= 0.6 A; V
GS
= 10 V
-
1.7
2.5
I
DSX
on-state drain current
V
GS
= 15 V; V
DS
= 10 V
-
2.4
-
A
C
is
input capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
16
-
pF
C
os
output capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
12
-
pF
C
rs
feedback capacitance
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
-
3.2
-
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
4
0
-
2
-
4
2
MDA491
1
T.C.
(mV/K)
ID (A)
10
-
2
10
-
1
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
3
2
1
0
5
VGS (V)
ID
(A)
10
20
15
MDA495
October 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
I
D
= 0.6 A; V
GS
= 10 V.
handbook, halfpage
0
50
100
150
4
3
1
0
2
MDA496
RDSon
(
)
Tj (
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
VDS (V)
C
(pF)
20
30
50
0
40
30
20
10
MDA497
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
VDS (V)
Crs
(pF)
20
30
20
0
16
12
8
4
MDA498
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