DATA SHEET
Product specification
Supersedes data of 2003 Sep 22
2004 Feb 04
DISCRETE SEMICONDUCTORS
BLF900-110; BLF900S-110
Base station LDMOS transistors
M3D379
M3D461
2004 Feb 04
2
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
FEATURES
Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V, frequency of 881.5 MHz
and I
DQ
of 700 mA; adjacent channel bandwidth is
30 kHz, adjacent channel at
750 kHz:
Output power = 24 W (AV)
Gain = 15 dB
Efficiency = 27%
ACPR =
-
45 dBc at 750 kHz and BW = 30 kHz.
110 W CW performance
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
DESCRIPTION
110 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502A
PINNING - SOT502B
PIN
DESCRIPTION
1
drain
2
gate
3
source; connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A (BLF900-110).
PIN
DESCRIPTION
1
drain
2
gate
3
source; connected to flange
1
Top view
MBL105
2
3
Fig.2 Simplified outline SOT502B (BLF900S-110).
Leads are gold-plated.
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
D
(%)
d
3
(dBc)
ACPR 750
(dBc)
2-tone, class-AB
f
1
= 890.0; f
2
= 890.1
27
100 (PEP)
17
38
-
33
-
CDMA (IS95)
881.5
27
24 (AV)
15
27
-
-
45
2004 Feb 04
3
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BLF900-110
-
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
BLF900S-110
-
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
75
V
V
GS
gate-source voltage
-
15
V
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
T
h
= 25
C, P
L
= 160 W (AV), note 1
0.9
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 3 mA
75
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= 10 V; I
D
= 250 mA
4.5
-
5.5
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 28 V
-
-
3
A
I
DSX
on-state drain current
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
31
-
-
A
I
GSS
gate leakage current
V
GS
=
15 V; V
DS
= 0
-
-
0.5
A
g
fs
forward transconductance
V
DS
= 20 V; I
D
= 7.5 A
-
7
-
S
R
DSon
drain-source on-state resistance
V
GS
= V
GSth
+ 9 V; I
D
= 9 A
-
90
-
m
2004 Feb 04
4
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. V
DS
= 27 V; f = 890 MHz; T
h
= 25
C; unless otherwise specified.
Note
1. Refer to RF Gain grouping table.
RF Gain grouping
Notes
1. 0.2 dB overlap is allowed for measurement repeatability.
2. For 2-tone at f
1
= 890 MHz; f
2
= 890.1 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Mode of operation: 2-tone CW, 100 kHz spacing, I
DQ
= 700 mA
G
p
power gain
P
L
= 100 W (PEP)
16
17
(1)
-
dB
D
drain efficiency
35
38
-
%
IRL
input return loss
-
-
9
<
-
6
dB
d
3
third order intermodulation
distortion
-
-
33
-
27
dBc
ruggedness
VSWR = 10 : 1 through all
phases; P
L
= 125 W (PEP)
no degradation in output power
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13), I
DQ
= 575 mA
G
p
power gain
P
L
= 24 W (AV)
-
15
-
dB
D
drain efficiency
P
L
= 24 W (AV)
-
27
-
%
ACPR 750
adjacent channel power ratio
at BW = 30 kHz
-
-
45
-
dBc
CODE
(1)
GAIN
(2)
(dB)
MIN.
MAX.
B
16.0
16.5
C
16.5
17.0
D
17.0
17.5
E
17.5
18.0
2004 Feb 04
5
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
handbook, halfpage
22
10
14
18
60
0
20
40
MLE343
1
Gp
(dB)
Gp
10
Pout (W)
10
3
10
2
D
(%)
D
Fig.3
Power gain and efficiency as functions of
load power; typical values.
V
DS
= 27 V; I
DQ
= 700 mA; f = 890 MHz.
handbook, halfpage
0
40
PL(PEP) (W)
Gp
(dB)
80
120
18
13
17
16
15
14
D
(%)
50
0
40
30
20
10
MLE344
Gp
D
Fig.4
Power gain and efficiency as functions of
peak envelope load power; typical values.
V
DS
= 27 V; I
DQ
= 700 mA; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
handbook, halfpage
0
-
60
-
40
-
20
MLE345
1
dim
(dBc)
10
PL(PEP) (W)
10
3
10
2
(1)
(2)
(3)
V
DS
= 27 V; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) I
DQ
= 600 mA.
(2) I
DQ
= 800 mA.
(3) I
DQ
= 700 mA.
handbook, halfpage
0
-
80
-
40
-
20
-
60
MLE346
1
10
PL(PEP) (W)
dim
(dBc)
10
3
10
2
(1)
(3)
(2)
V
DS
= 27 V; I
DQ
= 700 mA; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
Fig.6
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) d
3
.
(2) d
5
.
(3) d
7
.
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