DATA SHEET
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
1997 Jun 18
DISCRETE SEMICONDUCTORS
BSN20
N-channel enhancement mode
vertical D-MOS transistor
1997 Jun 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Thin and thick film circuits
General purpose fast switching applications.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
s
source
3
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM273
2
1
3
Top view
Marking code: M8p.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
DS
drain-source voltage (DC)
50
V
I
D
drain current (DC)
100
mA
R
DSon
drain-source on-state resistance
I
D
= 100 mA; V
GS
= 10 V
15
V
GSth
gate-source threshold voltage
I
D
= 1 mA; V
GS
= V
DS
1.8
V
1997 Jun 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Notes to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate, 10
8
0.7 mm.
2. Device mounted on a printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
50
V
V
GSO
gate-source voltage (DC)
open drain
-
20
V
I
D
drain current (DC)
-
100
mA
I
DM
peak drain current
-
300
mA
P
tot
total power dissipation
up to T
amb
= 25
C; note 1
-
300
mW
up to T
amb
= 25
C; note 2
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
430
K/W
note 2
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 10
A
50
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
0.4
-
1.8
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 40 V
-
-
1
A
I
GSS
gate-source leakage current
V
DS
= 0; V
GS
=
20 V
-
-
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 100 mA
-
8
15
V
GS
= 5 V; I
D
= 100 mA
-
14
20
V
GS
= 2.5 V; I
D
= 10 mA
-
18
30
y
fs
forward transfer admittance
V
DS
= 10 V; I
D
= 100 mA
40
80
-
mS
C
iss
input capacitance
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
-
8
15
pF
C
oss
output capacitance
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
-
7
15
pF
C
rss
reverse transfer capacitance
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
-
2
5
pF
Switching times
t
on
turn-on time
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 100 mA
-
2
5
ns
t
off
turn-off time
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 100 mA
-
5
10
ns
1997 Jun 18
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
Fig.2 Power derating curves.
(1) Mounted on a ceramic substrate.
(2) Mounted on a printed-circuit board.
handbook, halfpage
0
50
100
200
0.2
0
MBB755
150
Tamb (
o
C)
Ptot
(W)
0.4
(1)
(2)
Fig.3
Capacitance as a function of drain source
voltage; typical values.
V
GS
= 0; T
j
= 25
C; f = 1 MHz.
(1) C
is
.
(2) C
os
.
(3) C
rs
.
handbook, halfpage
0
10
20
30
0
5
10
15
20
25
VDS (V)
C
(pF)
MRA781
(1)
(2)
(3)
Fig.4 Typical output characteristics.
T
j
= 25
C.
handbook, halfpage
0
100
200
300
400
500
0
4
8
12
5 V
4 V
3 V
= 10 V
V
GS
ID
(mA)
VDS (V)
MRA782
2.5 V
7 V
Fig.5 Typical transfer characteristics.
V
DS
= 10 V; T
j
= 25
C.
handbook, halfpage
0
100
200
300
400
500
0
2
4
6
8
10
VGS (V)
MRA783
ID
(mA)
1997 Jun 18
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
Fig.6
Drain-source on-state resistance as a
function of drain current; typical values.
T
j
= 25
C.
(1) V
GS
= 2.5 V.
(2) V
GS
= 5 V.
(3) V
GS
= 10 V.
handbook, halfpage
24
0
16
8
MDA163
1
(1)
(2)
(3)
10
RDSon
(
)
ID (mA)
10
2
10
3
Fig.7
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
V
DS
= 0.1 V; T
j
= 25
C.
handbook, halfpage
0
2
10
80
60
20
0
40
4
RDSon
(
)
VGS (V)
6
8
MDA162
Fig.8
Temperature coefficient of gate-source
threshold voltage.
Typical V
GSth
at 1 mA.
k
V
GSth
at T
j
V
GSth
at 25
C
--------------------------------------
=
handbook, halfpage
0.7
0.8
0.9
1
1.1
1.2
0
50
100
150
-
50
k
Tj (
o
C)
MRA785
Fig.9
Temperature coefficient of drain-source
on-state resistance.
(1) I
D
= 10 mA; V
GS
= 2.5 V.
(2) I
D
= 100 mA; V
GS
= 10 V.
k
R
DSon
at T
j
R
DSon
at 25
C
-----------------------------------------
=
handbook, halfpage
0.4
0.8
1.2
1.6
2
0
50
100
150
-
50
k
(1)
(2)
Tj (
o
C)
MRA784
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