DATA SHEET
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC13b
1998 Apr 24
DISCRETE SEMICONDUCTORS
BSS89
N-channel enhancement mode
vertical D-MOS transistor
1998 Apr 24
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
d
drain
3
s
source
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM146
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
-
200
V
V
GSO
gate-source voltage (DC)
open drain
-
-
20
V
I
D
drain current (DC)
-
-
300
mA
P
tot
total power dissipation
T
amb
25
C
-
-
1
W
R
DSon
drain-source on-state resistance
I
D
= 400 mA; V
GS
= 10 V
-
4.5
6
y
fs
forward transfer admittance
I
D
= 400 mA; V
DS
= 25 V
140
350
-
mS
1998 Apr 24
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead
minimum 10
10 mm.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage (DC)
-
200
V
V
GSO
gate-source voltage (DC)
open drain
-
20
V
I
D
drain current (DC)
-
300
mA
I
DM
peak drain current
-
1.2
A
P
tot
total power dissipation
T
amb
25
C; note 1
-
1
W
T
stg
storage temperature
-
55
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 250
A
200
-
-
V
V
GSth
gate-source threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
0.8
-
2.8
V
I
DSS
drain-source leakage current
V
DS
= 60 V; V
GS
= 0
-
-
200
nA
V
DS
= 200 V; V
GS
= 0
-
0.1
60
A
I
GSS
gate leakage current
V
DS
= 0; V
GS
=
20 V
-
-
100
nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 400 mA
-
4.5
6
y
fs
forward transfer admittance
I
D
= 400 mA; V
DS
= 25 V
140
350
-
mS
C
iss
input capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
45
-
pF
C
oss
output capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
15
-
pF
C
rss
reverse transfer capacitance
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
-
3.5
-
pF
Switching times (see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to 10 V; V
DD
= 50 V;
I
D
= 250 mA
-
5
-
ns
t
off
turn-off time
V
GS
= 10 to 0 V; V
DD
= 50 V;
I
D
= 250 mA
-
15
-
ns
1998 Apr 24
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
Fig.2 Switching time test circuit.
handbook, halfpage
MSA631
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
1998 Apr 24
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
max
L2
max
2.5
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
TO-92 variant
SC-43
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
1
2
3
L2
e1
e
98-03-26
PDF 
ZIP