1.
Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT54 plastic package
1.2 Features
s
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s
General purpose switching and phase control
1.4 Quick reference data
2.
Pinning information
BT131 series
Triacs logic level
Rev. 08 -- 9 September 2005
Product data sheet
s
V
DRM
600 V (BT131-600)
s
I
T(RMS)
1 A
s
V
DRM
800 V (BT131-800)
s
I
TSM
12.5 A
Table 1:
Pinning
Pin
Description
Simplified outline
Symbol
1
main terminal 2 (T2)
SOT54 (TO-92)
2
gate (G)
3
main terminal 1 (T1)
1
2
3
sym051
T1
G
T2
BT131_SER_8
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 9 September 2005
2 of 12
Philips Semiconductors
BT131 series
Triacs logic level
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BT131-600
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BT131-800
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
BT131-600
[1]
-
600
V
BT131-800
-
800
V
I
T(RMS)
RMS on-state current
all conduction angles;
T
lead
= 51.2
C;
see
Figure 1
,
4
and
5
-
1
A
I
TSM
non-repetitive peak on-state
current
half sine wave; T
j
= 25
C
prior to surge; see
Figure 2
and
3
t = 20 ms
-
12.5
A
t = 16.7 ms
-
13.8
A
I
2
t
I
2
t for fusing
t = 10 ms
-
1.28
A
2
s
dI
T
/dt
rate of rise of on-state current
I
TM
= 1.5 A; I
G
= 20 mA;
dI
G
/dt = 200 mA/
s
T2+ G+
-
50
A/
s
T2+ G
-
-
50
A/
s
T2
-
G
-
-
50
A/
s
T2
-
G+
-
10
A/
s
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(AV)
average gate power
over any 20 ms period
-
0.1
W
T
stg
storage temperature
-
40
+150
C
T
j
junction temperature
-
125
C
BT131_SER_8
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 9 September 2005
3 of 12
Philips Semiconductors
BT131 series
Triacs logic level
a = form factor = I
T(RMS)
/I
T(AV)
Fig 1.
Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab038
0
0.5
1
1.5
0
0.2
0.4
0.6
0.8
1
1.2
I
T(RMS)
(A)
P
tot
(W)
125
65
35
T
lead(max)
(
C)
95
30
60
90
120
=180
003aab041
8
4
12
16
I
TSM
(A)
0
n
1
10
3
10
2
10
I
TSM
t
I
T
T
j
= 25
C max
T
BT131_SER_8
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 9 September 2005
4 of 12
Philips Semiconductors
BT131 series
Triacs logic level
t
p
20 ms
(1) dI
T
/dt limit
(2) T2
-
G+ quadrant
Fig 3.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
f = 50 Hz; T
lead
51.2
C
(1) T
lead
= 51.2
C
Fig 4.
RMS on-state current as a function of surge
duration, for sinusoidal currents; maximum
values
Fig 5.
RMS on-state current as a function of lead
temperature; maximum values
003aab040
t
p
(s)
10
-
5
10
-
1
10
-
2
10
-
4
10
-
3
10
2
10
3
I
TSM
(A)
10
(
1)
(2)
I
TSM
t
I
T
T
j
= 25
C max
T
003aab042
1
2
3
I
T(RMS)
(A)
0
surge duration (s)
10
-
2
10
1
10
-
1
003aab039
0
0.4
0.8
1.2
-
50
0
50
100
150
T
lead (
C)
I
T(RMS)
(A)
51.2
C
BT131_SER_8
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 -- 9 September 2005
5 of 12
Philips Semiconductors
BT131 series
Triacs logic level
5.
Thermal characteristics
[1]
Mounted on a printed-circuit board; lead length = 4 mm
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance from junction to
lead
full cycle
-
-
60
K/W
half cycle
-
-
80
K/W
R
th(j-a)
thermal resistance from junction to
ambient
see
Figure 6
[1]
-
150
-
K/W
(1) half cycle
(2) full cycle
Fig 6.
Transient thermal impedance as a function of pulse width
003aab045
1
10
-
1
10
10
2
Z
th(j-lead)
(K/W)
10
-
2
t
p
(s)
10
-
5
1
10
10
-
1
10
-
2
10
-
4
10
-
3
t
p
P
D
t
(1)
(2)
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