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Электронный компонент: BUT11APX

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1000
V
V
CBO
Collector-Base voltage (open emitter)
-
1000
V
V
CEO
Collector-emitter voltage (open base)
-
450
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
hs
25 C
-
32
W
V
CEsat
Collector-emitter saturation voltage
-
1.5
V
I
Csat
Collector saturation current
3.5
-
A
t
f
Fall time
I
Csat
=2.5A,I
B1
=0.5A,I
B2
=0.8A
145
160
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE
= 0 V
-
1000
V
V
CEO
Collector to emitter voltage (open base)
-
450
V
V
CBO
Collector to base voltage (open emitter)
-
1000
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
2
A
I
BM
Base current peak value
-
4
A
P
tot
Total power dissipation
T
hs
25 C
-
32
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
1 2 3
case
b
c
e
September 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 9 V; I
C
= 0 A
-
-
10
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
450
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C
= 3.0 A; I
B
= 0.6 A
-
0.25
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
= 2.5 A; I
B
= 0.33 A
-
-
1.3
V
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 5 V
10
22
35
h
FE
I
C
= 500 mA; V
CE
= 5 V
14
25
35
h
FEsat
I
C
= 2.5 A; V
CE
= 5 V
10
13.5
17
h
FEsat
I
C
= 3.5 A; V
CE
= 5 V
8
10
12
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Csat
= 2.5 A; I
B1
= -I
B2
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
Turn-on time
0.5
0.7
s
t
s
Turn-off storage time
3.3
4
s
t
f
Turn-off fall time
0.33
0.45
s
Switching times (inductive load)
I
Csat
= 2.5 A; I
B1
= 0.5 A; L
B
= 1
H;
-V
BB
= 5 V
t
s
Turn-off storage time
1.4
1.6
s
t
f
Turn-off fall time
145
160
ns
Switching times (inductive load)
I
Csat
= 2.5 A; I
B1
= 0.5 A; L
B
= 1
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
Turn-off storage time
1.7
1.9
s
t
f
Turn-off fall time
160
200
ns
1 Measured with half sine-wave voltage (curve tracer).
September 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
s;
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IB1
-IB2
ICsat
tr
30ns
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
LB
IB1
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICsat
IB1
-IB2
t
t
ts
tf
toff
10 %
90 %
September 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
Fig.7. Switching times waveforms with inductive load.
Fig.8. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
hs
)
Fig.9. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25C.
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
0
20
40
60
80
100
120
140
Ths / C
%
Normalised Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
P tot
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10.0
IC/A
VBEsat/V
0.0
0.1
0.2
0.3
0.4
0.5
0
1
10
IC/A
VCEsat/V
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
1V
5V
September 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
Fig.13. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.14. Reverse bias safe operating area. T
j
T
j max
Fig.15. Test circuit RBSOA. V
cl
1000V; V
cc
= 150V;
V
BB
= -5V; L
B
= 1
H; L
c
= 200
H
1u
100u
10m
1
100
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D=0
0.5
0.2
0.1
0.05
0.02
10u
1m
100m
10
D =
tp
T
T
P
t
D
t
p
BU1706AX
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
0
200
400
600
800
1,000
1,200
0
1
2
3
4
5
6
7
8
9
10
11
VCE CLAMP/V
IC/V
September 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
Fig.16. Forward bias safe operating area. T
hs
25 C
(1)
P
tot
max and P
tot
peak max lines.
(2)
Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III
Extension during turn-on in single
transistor converters provided that
R
BE
100
and t
p
0.6
s.
NB:
Mounted with heatsink compound and
30
5 newton force on the centre of the
envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
V / V
ICM max
IC max
II
I
= 0.01
III
500 ms
(1)
(2)
CE
September 1998
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
September 1998
7
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
8
Rev 1.000