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Электронный компонент: BY459F-1500

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Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated
double
diffused
SYMBOL
PARAMETER
MAX.
UNIT
rectifier diode in a full pack plastic
envelope,
featuring
fast
forward
V
RRM
Repetitive peak reverse voltage
1500
V
recovery and low forward recovery
V
F
Forward voltage
1.2
V
voltage. The device is intended for
I
FWM
Working peak forward current
10
A
use in multi-sync monitor horizontal
I
FRM
Repetitive peak forward current
100
A
deflection circuits.
t
fr
Forward recovery time
250
ns
V
fr
Forward recovery voltage
14
V
PINNING - SOD100
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Non-repetitive peak reverse
-
1500
V
voltage during flash-over of
picture tube
V
RRM
Repetitive peak reverse voltage t = 6
s; f = 82kHz
-
1500
V
V
RWM
Crest working reverse voltage
-
1300
V
I
FWM
Working peak forward current
1
f = 82kHz; T
hs
127 C
-
10
A
I
FRM
Repetitive peak forward current t = 100
s
-
100
A
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; T
j
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from
R.H.
65% ; clean and dustfree
-
1500
V
both terminals to external
heatsink
C
isol
Capacitance from cathode to
f = 1 MHz
-
12
-
pF
external heatsink
1
2
case
k
a
1
2
1 Including worst case forward recovery losses, see fig:5.
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 6.5 A
-
0.95
1.3
V
I
F
= 6.5 A; T
j
= 125 C
-
0.85
1.2
V
I
R
Reverse current
V
R
= V
RWMmax
-
-
0.25
mA
V
R
= V
RWMmax
; T
j
= 125 C
-
-
1.0
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
fr
Forward recovery voltage
I
F
= 6.5 A; dI
F
/dt = 50 A/
s
-
8
14
V
t
fr
Forward recovery time
I
F
= 6.5 A; dI
F
/dt = 50 A/
s; V
F
= 5 V
-
170
250
ns
I
F
= 6.5 A; dI
F
/dt = 50 A/
s; V
F
= 2 V
-
350
-
ns
t
rr
Reverse recovery time
I
F
= 1 A; -dI
F
/dt = 50 A/
s; V
R
30 V
-
250
350
ns
Q
s
Reverse recovery charge
I
F
= 2 A; -dI
F
/dt = 20 A/
s; V
R
30 V
-
2.0
3.0
C
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
Fig.3. Basic horizontal deflection circuit.
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.5. Total dissipation P
tot
= f(I
FWM
); including forward
recovery losses; Basic horizontal deflection circuit.
Fig.6. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
time
time
V F
V
fr
V F
I
F
10%
5V / 2V
tfr
10
100
1
10
100
BY459X-1500
line frequency / kHz
Maximum pulse width / us
V
time
VRRM
width tp
period T
pulse
100%
time
dI
dt
F
I
R
I
F
trr
25%
Qs
0
2
4
6
8
10
0
1
2
3
4
5
6
BY459X
IFWM / A
Ptot / W
f = 82 kHz
64 kHz
Ths / C
150
140.4
130.8
121.2
IFWM
ton
IF
time
Line output transformer
VCC
D1
LY
Cs
Cf
deflection transistor
0
1
2
BY459
VF / V
IF / A
30
20
10
0
0.5
1.5
max
typ
Tj = 125 C
Tj = 25 C
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
Fig.7. Typical and maximum V
fr
= f(dI
F
/dt); I
F
= 6.5A;
T
j
= 25C
Fig.8. Maximum reverse recovery time t
rr
= f(dI
F
/dt);
parameter T
j
; V
R
30V
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
0
100
200
BY459
dIF/dt (A/us)
Vfr / V
30
20
10
0
50
150
max
typ
Zth j-hs / (K/W)
10
1
0.1
0.01
10us
100us
1ms
10ms
0.1s
1s
10s
tp / s
P
t
p
t
D
1
10
100
BY459
-dIF/dt (A/us)
trr / us
2
1.5
1
0.5
IF = 10 A
2 A
5 A
0
1 A
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diode
BY459F-1500
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M
0.4
top view
3.5 max
not tinned
4.4
k
a
August 1996
5
Rev 1.200