Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- SOT186A
- LIMITING VALUES
- ESD LIMITING VALUE
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
0.95 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 16 A
Isolated mounting tab
I
RRM
0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
PINNING
SOT186A
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
anode 1
power supplies.
2
cathode
The BYQ30EX series is supplied in
the conventional leaded SOT186A
3
anode 2
package.
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ30EX
-150
-200
V
RRM
Peak repetitive reverse voltage
-
150
200
V
V
RWM
Crest working reverse voltage
-
150
200
V
V
R
Continuous reverse voltage
-
150
200
V
I
O(AV)
Average rectified output current square wave
-
16
A
(both diodes conducting)
1
= 0.5; T
hs
59 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
16
A
per diode
T
hs
59 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
k
a1
a2
1
3
2
1 2 3
case
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.0
K/W
heatsink
without heatsink compound
-
-
7.0
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.83
0.95
V
I
F
= 16 A; T
j
= 150C
-
1.0
1.15
V
I
F
= 16 A;
-
0.98
1.25
I
R
Reverse current
V
R
= V
RWM
; T
j
= 100 C
-
0.3
0.6
mA
V
R
= V
RWM
-
2
30
A
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
11
nC
t
rr
Reverse recovery time
I
F
= 1 A; V
R
30 V;
-
20
25
ns
-dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 1 A; V
R
30 V;
-
1.0
2
A
-dI
F
/dt = 50 A/
s; T
j
= 100 C
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
)per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25 C.
Fig.6. Maximum t
rr
at T
j
= 100 C.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYQ30
Rs 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) / C
150
140
130
120
110
100
90
time
time
V F
V
fr
V F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0.5
0.2
0.1
BYQ30
Rs = 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) / C
150
140
130
120
110
90
80
D = 1.0
D =
t
p
t
p
T
T
t
I
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=10A
IF=1A
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
Fig.7. Maximum I
rrm
at T
j
= 25 C.
Fig.8. Maximum I
rrm
at T
j
= 100 C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C.
Fig.11. Transient thermal impedance; Z
th j-hs
= f(t
p
).
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYQ30EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0
0.5
1
1.5
2
0
5
10
15
20
BYQ30
Forward voltage, VF (V)
Forward current, IF (A)
typ
max
Tj = 25 C
Tj = 150 C
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
October 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30EX series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
6
Rev 1.200
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