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Philips Semiconductors
Product specification
Rectifier diodes
BYV143F series
schottky barrier
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
schottky rectifier diodes in a full pack
plastic
envelope,
featuring
low
BYV143F-
35
40
45
forward voltage drop, absence of
V
RRM
Repetitive peak reverse
35
40
45
V
stored
charge.
and
guaranteed
voltage
reverse surge capability. The devices
V
F
Forward voltage
0.62
0.62
0.62
V
are intended for use in switched mode
I
O(AV)
Average output current
20
20
20
A
power supplies and high frequency
(both diodes conducting)
circuits
in
general
where
low
conduction and zero switching losses
are important.
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-35
-40
-45
V
RRM
Repetitive peak reverse voltage
-
35
40
45
V
V
RWM
Crest working reverse voltage
-
35
40
45
V
V
R
Continuous reverse voltage
T
hs
112 C
-
35
40
45
V
I
O(AV)
Average output current (both
square wave;
= 0.5;
-
20
A
diodes conducting)
T
hs
87 C
I
O(RMS)
RMS output current (both
-
20
A
diodes conducting)
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
hs
87 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current, per diode
t = 8.3 ms
-
110
A
sinusoidal T
j
= 125 C prior
to surge; with reapplied
V
RRM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
50
A
2
s
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
1
A
per diode.
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
1
A
current per diode.
T
stg
Storage temperature
-65
175
C
T
j
Operating junction temperature
-
150
C
1 2 3
case
k
a1
a2
1
2
3
August 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143F series
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
-
5.7
K/W
heatsink
both diodes
-
-
4.8
K/W
(with heatsink compound)
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 15 A; T
j
= 150C
-
0.55
0.62
V
I
F
= 20 A
-
0.76
0.80
V
I
R
Reverse current (per diode)
V
R
= V
RRM
-
10
200
A
V
R
= V
RRM
; T
j
= 125 C
-
10
30
mA
C
d
Junction capacitance (per
f = 1MHz; V
R
= 5V; T
j
= 25 C to
-
500
-
pF
diode)
125 C
August 1996
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143F series
schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
0
5
10
15
20
25
0
5
10
15
BYV143
IF(AV) / A
PF / W
Ths(max) / C
150
121.5
93
64.5
Rs = 0.0120 Ohms
Vo = 0.4200 V
0.5
0.1
D = 1.0
0.2
T
I
D =
t
p
t
p
T
t
0
25
50
100
10
1
0.1
0.01
IR / mA
VR/ V
BYV143
Tj = 50 C
75 C
100 C
125 C
150 C
0
5
10
15
0
2
4
6
8
10
12
1.9
2.2
2.8
4
BYV143F
IF(AV) / A
PF / W
Rs = 0.012 Ohms
Vo = 0.44 V
a = 1.57
Ths(max) / C
150
138.6
127.2
115.8
104.4
93
81.6
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR745
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
BYV143
VF / V
IF / A
Tj = 25 C
Tj = 150 C
max
typ
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp (s)
Zth j-hs (K/W)
P
t
p
t
D
August 1996
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143F series
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
August 1996
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143F series
schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.100
Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT186
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
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