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Электронный компонент: BYV29-600

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Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
SYMBOL
PARAMETER
MAX.
UNIT
overload protected logic level power
MOSFET in TOPFET2 technology
V
DS
Continuous drain source voltage
50
V
assembled in a 3 pin plastic
I
D
Continuous drain current
16
A
package.
P
D
Total power dissipation
65
W
T
j
Continuous junction temperature
150
C
APPLICATIONS
R
DS(ON)
Drain-source on-state resistance
50
m
General purpose switch for driving
I
ISL
Input supply current
V
IS
= 5 V
650
A
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT78B
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
1 2 3
MBL292
Front view
mb
mb
P
D
S
I
TOPFET
May 2001
1
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain source voltage
1
-
-
50
V
I
D
Continuous drain current
V
IS
= 5 V; T
mb
=
25 C
-
self -
A
limited
I
D
Continuous drain current
V
IS
= 5 V; T
mb
125 C
-
16
A
I
I
Continuous input current
-
-5
5
mA
I
IRM
Non-repetitive peak input current
t
p
1 ms
-10
10
mA
P
D
Total power dissipation
T
mb
25 C
-
65
W
T
stg
Storage temperature
-
-55
175
C
T
j
Continuous junction temperature
2
normal operation
-
150
C
T
sold
Lead temperature
during soldering
-
260
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn-off
I
DM
= 16 A; V
DD
20 V
E
DSM
Non-repetitive clamping energy
T
mb
25 C
-
200
mJ
E
DRM
Repetitive clamping energy
T
mb
95 C; f = 250 Hz
-
32
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DS
Drain source voltage
3
4 V
V
IS
5.5 V
0
35
V
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
-
1.75
1.92
K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
OUTPUT CHARACTERISTICS
Limits are for -40C
T
mb
150C; typicals are for T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D
= 10 mA
50
-
-
V
I
DM
= 2 A; t
p
300
s;
0.01
50
60
70
V
I
DSS
Drain source leakage current
V
DS
= 40 V
-
-
100
A
T
mb
= 25 C
-
0.1
10
A
On-state
I
DM
= 6 A; t
p
300
s;
0.01
R
DS(ON)
Drain-source resistance
V
IS
4.4 V
-
-
95
m
T
mb
= 25 C
-
36
50
m
V
IS
4 V
-
-
100
m
T
mb
= 25 C
-
39
55
m
OVERLOAD CHARACTERISTICS
-40C
T
mb
150C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load
V
DS
= 13 V
I
D
Drain current limiting
V
IS
= 5 V;
T
mb
= 25C
16
24
32
A
4.4 V
V
IS
5.5 V
12
-
36
A
4 V
V
IS
5.5 V
8
-
36
A
Overload protection
V
IS
= 5 V;T
mb
= 25C
P
D(TO)
Overload power threshold
device trips if P
D
> P
D(TO)
40
120
160
W
T
DSC
Characteristic time
which determines trip time
1
200
350
600
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
-
C
temperature
2
1 Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2 This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40C
T
mb
150C; typicals are for T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
Input threshold voltage
V
DS
= 5 V; I
D
= 1 mA
0.6
-
2.4
V
T
mb
= 25C
1.1
1.6
2.1
V
I
IS
Input supply current
normal operation;
V
IS
= 5 V
100
220
400
A
V
IS
= 4 V
80
195
330
A
I
ISL
Input supply current
protection latched;
V
IS
= 5 V
200
400
650
A
V
IS
= 3 V
130
250
430
A
V
ISR
Protection reset voltage
1
reset time t
r
100
s
1.5
2
2.9
V
t
lr
Latch reset time
V
IS1
= 5 V, V
IS2
< 1 V
10
40
100
s
V
(CL)IS
Input clamping voltage
I
I
= 1.5 mA
5.5
-
8.5
V
R
IG
Input series resistance
2
T
mb
= 25C
-
33
-
k
to gate of power MOSFET
SWITCHING CHARACTERISTICS
T
mb
= 25 C; V
DD
= 13 V; resistive load R
L
= 4
. Refer to waveform figure and test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
IS
= 5 V
-
15
30
s
t
r
Rise time
-
30
60
s
t
d off
Turn-off delay time
V
IS
= 0 V
-
70
140
s
t
f
Fall time
-
35
70
s
1 The input voltage below which the overload protection circuits will be reset.
2 Not directly measureable from device terminals.
May 2001
4
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
MECHANICAL DATA
Fig.2. SOT78B (TO220AB) package
1
, pin 2 connected to mounting base.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78B
D
D1
q
L
1
2
3
L1
b1
e
e
b
(1)
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads
SOT78B
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Notes
1. The positional accuracy of the terminals is controlled within zone L1 max.
2. Mounting base configuration is not defined within the dimensions E and D
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
(1)
D
c
L2
max.
3.0
3.8
3.6
4.3
4.1
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
w
0.4
0.7
0.4
15.8
15.2
0.85
0.60
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
p1
E
L
01-02-22
mounting
base
(2)
w
M
p
p1
1 Refer to mounting instructions for SOT78 (TO220) envelopes. Epoxy meets UL94 V0 at 1/8". Net mass: 2 g
May 2001
5
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK118-50DL
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
PRODUCT
DEFINITIONS
STATUS
1
STATUS
2
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
May 2001
6
Rev 1.900